Datasheets
IPW65R080CFDFKSA2 by: Infineon Technologies AG

Power Field-Effect Transistor,

Part Details for IPW65R080CFDFKSA2 by Infineon Technologies AG

Overview of IPW65R080CFDFKSA2 by Infineon Technologies AG

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Applications Energy and Power Systems Renewable Energy

Price & Stock for IPW65R080CFDFKSA2

Part # Distributor Description Stock Price Buy
DISTI # 26AK2295
Newark Mosfet, N-Ch, 650V, 43.3A, To-247 Rohs Compliant: Yes |Infineon IPW65R080CFDFKSA2 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 236
  • 1 $12.2200
  • 10 $11.0300
  • 25 $10.4000
  • 50 $9.7700
  • 100 $9.1400
  • 480 $8.5500
  • 720 $7.9600
$7.9600 / $12.2200 Buy Now
DISTI # 448-IPW65R080CFDFKSA2-ND
DigiKey MOSFET N-CH 650V 43.3A TO247-3 Min Qty: 1 Lead time: 17 Weeks Container: Tube 154
In Stock
  • 1 $9.3100
  • 30 $7.4327
  • 120 $6.6502
  • 510 $5.8679
  • 1,020 $5.2811
  • 2,010 $4.9486
$4.9486 / $9.3100 Buy Now
DISTI # IPW65R080CFDFKSA2
Avnet Americas Trans MOSFET N-CH 650V 68.5A 3-Pin PG-TO-247 Tube - Rail/Tube (Alt: IPW65R080CFDFKSA2) RoHS: Not Compliant Min Qty: 240 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Container: Tube 0
  • 240 $6.0035
$6.0035 Buy Now
DISTI # 726-IPW65R080CFDFKS2
Mouser Electronics MOSFET HIGH POWER_LEGACY RoHS: Compliant 0
  • 1 $9.3100
  • 10 $9.2800
  • 25 $7.1000
  • 100 $6.3900
  • 240 $5.4800
  • 480 $5.2800
  • 1,200 $4.9400
$4.9400 / $9.3100 Order Now
Future Electronics N-Channel 650 V 43.3 A 391 W Through Hole Power Mosfet - PG-TO247-3 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 240 Lead time: 17 Weeks Container: Tube 150
Tube
  • 30 $4.1800
  • 480 $4.1100
  • 720 $4.0700
  • 960 $4.0400
  • 1,200 $3.9600
$3.9600 / $4.1800 Buy Now
Future Electronics N-Channel 650 V 43.3 A 391 W Through Hole Power Mosfet - PG-TO247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Lead time: 17 Weeks Container: Tube 0
Tube
  • 30 $5.3300
  • 90 $5.1800
  • 150 $5.1100
  • 450 $4.9700
  • 750 $4.8500
$4.8500 / $5.3300 Buy Now
Future Electronics N-Channel 650 V 43.3 A 391 W Through Hole Power Mosfet - PG-TO247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Lead time: 17 Weeks Container: Tube 0
Tube
  • 30 $5.3300
  • 90 $5.1800
  • 150 $5.1100
  • 450 $4.9700
  • 750 $4.8500
$4.8500 / $5.3300 Buy Now
DISTI # SP001987362
EBV Elektronik Trans MOSFET N-CH 650V 68.5A 3-Pin PG-TO-247 Tube (Alt: SP001987362) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 30 150
  • 30 $5.6600
  • 150 $5.2800
$5.2800 / $5.6600 Buy Now

Part Details for IPW65R080CFDFKSA2

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IPW65R080CFDFKSA2 Part Data Attributes

IPW65R080CFDFKSA2 Infineon Technologies AG
Buy Now Datasheet
Compare Parts:
IPW65R080CFDFKSA2 Infineon Technologies AG Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks
Samacsys Manufacturer Infineon
Avalanche Energy Rating (Eas) 1160 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V
Drain Current-Max (ID) 43.3 A
Drain-source On Resistance-Max 0.08 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 391 W
Pulsed Drain Current-Max (IDM) 137 A
Surface Mount NO
Terminal Finish Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IPW65R080CFDFKSA2

This table gives cross-reference parts and alternative options found for IPW65R080CFDFKSA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW65R080CFDFKSA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPW65R080CFD Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPW65R080CFDFKSA2 vs IPW65R080CFD
IPW65R080CFDA Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPW65R080CFDFKSA2 vs IPW65R080CFDA
IPW65R080CFDAFKSA1 Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPW65R080CFDFKSA2 vs IPW65R080CFDAFKSA1
Part Number Description Manufacturer Compare
IXKP35N60C5 Power Field-Effect Transistor, 35A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Littelfuse Inc IPW65R080CFDFKSA2 vs IXKP35N60C5
TK39N60W TRANSISTOR POWER, FET, FET General Purpose Power Toshiba America Electronic Components IPW65R080CFDFKSA2 vs TK39N60W
IPW65R080CFD Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPW65R080CFDFKSA2 vs IPW65R080CFD
NVHL082N65S3F Single N-Channel Power MOSFET SUPERFET® III, FRFET®, 650 V , 40 A, 82 mΩ, TO-247, 450-TUBE, Automotive Qualified onsemi IPW65R080CFDFKSA2 vs NVHL082N65S3F
TK39J60W5 TRANSISTOR POWER, FET, FET General Purpose Power Toshiba America Electronic Components IPW65R080CFDFKSA2 vs TK39J60W5
APT38N60BC6 Power Field-Effect Transistor, 38A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 Microchip Technology Inc IPW65R080CFDFKSA2 vs APT38N60BC6
IPB60R099C6 Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Infineon Technologies AG IPW65R080CFDFKSA2 vs IPB60R099C6
IPW65R080CFDAFKSA1 Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPW65R080CFDFKSA2 vs IPW65R080CFDAFKSA1
IPW65R080CFDA Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 Infineon Technologies AG IPW65R080CFDFKSA2 vs IPW65R080CFDA
IPB60R099C6ATMA1 Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG IPW65R080CFDFKSA2 vs IPB60R099C6ATMA1

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