Part Details for IPW65R080CFDFKSA2 by Infineon Technologies AG
Overview of IPW65R080CFDFKSA2 by Infineon Technologies AG
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Price & Stock for IPW65R080CFDFKSA2
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
26AK2295
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Newark | Mosfet, N-Ch, 650V, 43.3A, To-247 Rohs Compliant: Yes |Infineon IPW65R080CFDFKSA2 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 236 |
|
$7.9600 / $12.2200 | Buy Now |
DISTI #
448-IPW65R080CFDFKSA2-ND
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DigiKey | MOSFET N-CH 650V 43.3A TO247-3 Min Qty: 1 Lead time: 17 Weeks Container: Tube |
154 In Stock |
|
$4.9486 / $9.3100 | Buy Now |
DISTI #
IPW65R080CFDFKSA2
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Avnet Americas | Trans MOSFET N-CH 650V 68.5A 3-Pin PG-TO-247 Tube - Rail/Tube (Alt: IPW65R080CFDFKSA2) RoHS: Not Compliant Min Qty: 240 Package Multiple: 30 Lead time: 17 Weeks, 0 Days Container: Tube | 0 |
|
$6.0035 | Buy Now |
DISTI #
726-IPW65R080CFDFKS2
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Mouser Electronics | MOSFET HIGH POWER_LEGACY RoHS: Compliant | 0 |
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$4.9400 / $9.3100 | Order Now |
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Future Electronics | N-Channel 650 V 43.3 A 391 W Through Hole Power Mosfet - PG-TO247-3 RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 240 Lead time: 17 Weeks Container: Tube | 150Tube |
|
$3.9600 / $4.1800 | Buy Now |
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Future Electronics | N-Channel 650 V 43.3 A 391 W Through Hole Power Mosfet - PG-TO247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Lead time: 17 Weeks Container: Tube | 0Tube |
|
$4.8500 / $5.3300 | Buy Now |
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Future Electronics | N-Channel 650 V 43.3 A 391 W Through Hole Power Mosfet - PG-TO247-3 RoHS: Compliant pbFree: Yes Min Qty: 240 Package Multiple: 30 Lead time: 17 Weeks Container: Tube | 0Tube |
|
$4.8500 / $5.3300 | Buy Now |
DISTI #
SP001987362
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EBV Elektronik | Trans MOSFET N-CH 650V 68.5A 3-Pin PG-TO-247 Tube (Alt: SP001987362) RoHS: Compliant Min Qty: 240 Package Multiple: 240 Lead time: 18 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
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New Advantage Corporation | RoHS: Compliant Min Qty: 1 Package Multiple: 30 | 150 |
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$5.2800 / $5.6600 | Buy Now |
Part Details for IPW65R080CFDFKSA2
IPW65R080CFDFKSA2 CAD Models
IPW65R080CFDFKSA2 Part Data Attributes
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IPW65R080CFDFKSA2
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IPW65R080CFDFKSA2
Infineon Technologies AG
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 17 Weeks | |
Samacsys Manufacturer | Infineon | |
Avalanche Energy Rating (Eas) | 1160 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 650 V | |
Drain Current-Max (ID) | 43.3 A | |
Drain-source On Resistance-Max | 0.08 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 391 W | |
Pulsed Drain Current-Max (IDM) | 137 A | |
Surface Mount | NO | |
Terminal Finish | Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IPW65R080CFDFKSA2
This table gives cross-reference parts and alternative options found for IPW65R080CFDFKSA2. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IPW65R080CFDFKSA2, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPW65R080CFD | Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPW65R080CFDFKSA2 vs IPW65R080CFD |
IPW65R080CFDA | Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPW65R080CFDFKSA2 vs IPW65R080CFDA |
IPW65R080CFDAFKSA1 | Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3 | Infineon Technologies AG | IPW65R080CFDFKSA2 vs IPW65R080CFDAFKSA1 |