Part Details for IRCZ34-013PBF by International Rectifier
Results Overview of IRCZ34-013PBF by International Rectifier
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- Tariff Estimator: (Available) NEW
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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IRCZ34-013PBF Information
IRCZ34-013PBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
US Tariff Estimator: IRCZ34-013PBF by International Rectifier
Calculations from this tool are estimations only for imports into the United States. Please refer to the distributor or manufacturer and reference official US government sources and authorities to verify any final purchase costs.
IRCZ34-013PBF Part Data Attributes
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IRCZ34-013PBF
International Rectifier
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Datasheet
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IRCZ34-013PBF
International Rectifier
Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Part Package Code | TO-220 | |
| Package Description | To-220, 5 Pin | |
| Pin Count | 5 | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | Drain | |
| Configuration | Single With Built-In Current And Kelvin Sensor | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 30 A | |
| Drain-source On Resistance-Max | 0.05 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PSFM-T5 | |
| Number of Elements | 1 | |
| Number of Terminals | 5 | |
| Operating Mode | Enhancement Mode | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Peak Reflow Temperature (Cel) | 250 | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation Ambient-Max | 88 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |