Part Details for IRF1010ZS by Infineon Technologies AG
Overview of IRF1010ZS by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for IRF1010ZS
IRF1010ZS CAD Models
IRF1010ZS Part Data Attributes:
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IRF1010ZS
Infineon Technologies AG
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Datasheet
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IRF1010ZS
Infineon Technologies AG
Power Field-Effect Transistor, 75A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3
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Rohs Code | No | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | PLASTIC, D2PAK-3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 130 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 75 A | |
Drain-source On Resistance-Max | 0.0075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 360 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF1010ZS
This table gives cross-reference parts and alternative options found for IRF1010ZS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF1010ZS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IPB80N06S3L05ATMA1 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IRF1010ZS vs IPB80N06S3L05ATMA1 |
FS70VS-06-T1 | Power Field-Effect Transistor, 70A I(D), 60V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220S, 4 PIN | Mitsubishi Electric | IRF1010ZS vs FS70VS-06-T1 |
IRL3705Z | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC PACKAGE-3 | Infineon Technologies AG | IRF1010ZS vs IRL3705Z |
STB80NF55-08-1 | 80A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3 | STMicroelectronics | IRF1010ZS vs STB80NF55-08-1 |
STU60N55F3 | 80A, 55V, 0.0085ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3 | STMicroelectronics | IRF1010ZS vs STU60N55F3 |
IRF1010EZS | Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF1010ZS vs IRF1010EZS |
BUK7508-55,127 | 75A, 55V, 0.008ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | NXP Semiconductors | IRF1010ZS vs BUK7508-55,127 |
IPB80N06S3L08ATMA1 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IRF1010ZS vs IPB80N06S3L08ATMA1 |
IPB091N06NG | Power Field-Effect Transistor, 80A I(D), 60V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | IRF1010ZS vs IPB091N06NG |
IRL3705ZS | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF1010ZS vs IRL3705ZS |