IRF121
Description: 9.2A, 80V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

Overview of IRF121 by Intersil Corporation

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Part Data Attributes for IRF121 by Intersil Corporation

IRF121
Intersil Corporation
-
-
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERSIL CORP
Reach Compliance Code
not_compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
80 V
Drain Current-Max (ID)
9.2 A
Drain-source On Resistance-Max
0.27 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204AA
JESD-30 Code
O-MBFM-P2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
60 W
Power Dissipation-Max (Abs)
40 W
Pulsed Drain Current-Max (IDM)
37 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
59 ns
Turn-on Time-Max (ton)
58 ns
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  1. IRF121
    Intersil Corporation
    9.2A, 80V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
    VS

Alternate Parts for IRF121

This table gives cross-reference parts and alternative options found for IRF121. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF121, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF121 Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF121 vs IRF121
IRF121 9.2A, 80V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC IRF121 vs IRF121
IRF121 Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF121 vs IRF121
Part Number Description Manufacturer Compare
RFM15N05 15A, 50V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF121 vs RFM15N05
IRF123 Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF121 vs IRF123
IRF121 Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF121 vs IRF121
IRF121 Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF121 vs IRF121
RFM15N05 Power Field-Effect Transistor, 15A I(D), 50V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF121 vs RFM15N05
IRF123 8A, 80V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF121 vs IRF123
IRF121 9.2A, 80V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC IRF121 vs IRF121
IRF123 8A, 80V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC IRF121 vs IRF123

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