Datasheets
IRF123 by:

8A, 80V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA

Part Details for IRF123 by Rochester Electronics LLC

Overview of IRF123 by Rochester Electronics LLC

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Part Details for IRF123

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IRF123 Part Data Attributes

IRF123 Rochester Electronics LLC
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IRF123 Rochester Electronics LLC 8A, 80V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Part Life Cycle Code Active
Ihs Manufacturer ROCHESTER ELECTRONICS LLC
Reach Compliance Code unknown
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 80 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.36 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-204AA
JESD-30 Code O-MBFM-P2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status COMMERCIAL
Surface Mount NO
Terminal Form PIN/PEG
Terminal Position BOTTOM
Transistor Element Material SILICON

Alternate Parts for IRF123

This table gives cross-reference parts and alternative options found for IRF123. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF123, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRF123 8A, 80V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF123 vs IRF123
IRF123 Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF123 vs IRF123
Part Number Description Manufacturer Compare
RFM15N05 15A, 50V, 0.14ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF123 vs RFM15N05
IRF123 Power Field-Effect Transistor, 8A I(D), 80V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF123 vs IRF123
IRF121 9.2A, 80V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF123 vs IRF121
IRF121 Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF123 vs IRF121
IRF121 Power Field-Effect Transistor, 9.2A I(D), 80V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF123 vs IRF121
RFM15N05 Power Field-Effect Transistor, 15A I(D), 50V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF123 vs RFM15N05
IRF123 8A, 80V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF123 vs IRF123
IRF121 9.2A, 80V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA Rochester Electronics LLC IRF123 vs IRF121

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