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| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| Harris Semiconductor | Power Field-Effect Transistor, 8A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | $0.6406 / $1.2875 |
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| Vishay Siliconix | Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-3 |
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| New Jersey Semiconductor Products Inc | Power Field-Effect Transistor, 9.2A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | $7.8750 / $15.0000 |
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| International Rectifier | Power Field-Effect Transistor, 9.2A I(D), 100V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | $0.6406 / $2.9588 |
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| SGS Thomson | $6.0000 |
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| Internet Systems Consortium Inc | $15.0408 / $25.5040 |
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| Intersil Corporation | Power Field-Effect Transistor, 7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Samsung Semiconductor | Power Field-Effect Transistor, 7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| General Electric Solid State | Transistor |
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| FCI Semiconductor | Power Field-Effect Transistor, 7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Rochester Electronics LLC | 8A, 100V, 0.36ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA |
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| Thomson Consumer Electronics | Power Field-Effect Transistor, 7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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