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Part Details for IRF540NSTRLPBF by Infineon Technologies AG
Overview of IRF540NSTRLPBF by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF540NSTRLPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
40M7920
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Newark | N Channel Mosfet, 100V, 33A, D2-Pak, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:33A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRF540NSTRLPBF Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 5707 |
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$0.7630 / $1.6100 | Buy Now |
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DISTI #
IRF540NSTRLPBFCT-ND
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DigiKey | MOSFET N-CH 100V 33A D2PAK Min Qty: 1 Lead time: 10 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
17027 In Stock |
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$0.5910 / $1.5000 | Buy Now |
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DISTI #
IRF540NSTRLPBF
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Avnet Americas | Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF540NSTRLPBF) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.5251 / $0.6377 | Buy Now |
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DISTI #
IRF540NSTRLPBF
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Avnet Americas | Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRF540NSTRLPBF) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 10 Weeks, 0 Days Container: Reel | 0 |
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$0.5251 / $0.6377 | Buy Now |
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DISTI #
40M7920
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Avnet Americas | Trans MOSFET N-CH 100V 33A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (Alt: 40M7920) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 3 Days Container: Ammo Pack | 872 Partner Stock |
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$1.0900 / $1.6500 | Buy Now |
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DISTI #
942-IRF540NSTRLPBF
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Mouser Electronics | MOSFET MOSFT 100V 33A 44mOhm 47.3nC RoHS: Compliant | 15183 |
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$0.5900 / $1.4900 | Buy Now |
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DISTI #
70017673
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RS | MOSFET, Power, N-Ch, VDSS 100V, RDS(ON) 44 Milliohms, ID 33A, D2Pak, PD 130W, VGS+/-20V | Infineon IRF540NSTRLPBF RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Container: Bulk | 700 |
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$1.1100 / $1.4800 | Buy Now |
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Future Electronics | Single N-Channel 100V 44 mOhm 71 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 172000Reel |
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$0.5350 / $0.5800 | Buy Now |
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Future Electronics | Single N-Channel 100V 44 mOhm 71 nC HEXFET® Power Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 7200Reel |
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$0.5350 / $0.5850 | Buy Now |
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Bristol Electronics | 2400 |
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RFQ |
Part Details for IRF540NSTRLPBF
IRF540NSTRLPBF CAD Models
IRF540NSTRLPBF Part Data Attributes
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IRF540NSTRLPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF540NSTRLPBF
Infineon Technologies AG
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PSSO-G2 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks, 3 Days | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 185 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.044 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 130 W | |
| Pulsed Drain Current-Max (IDM) | 110 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF540NSTRLPBF
This table gives cross-reference parts and alternative options found for IRF540NSTRLPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540NSTRLPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF540NSTRRPBF | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF540NSTRLPBF vs IRF540NSTRRPBF |
| IRF540NSPBF | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF540NSTRLPBF vs IRF540NSPBF |
| IRF540NS | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | International Rectifier | IRF540NSTRLPBF vs IRF540NS |
| IRF540NSPBF | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF540NSTRLPBF vs IRF540NSPBF |
| IRF540NSTRLPBF | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF540NSTRLPBF vs IRF540NSTRLPBF |
| IRF540NSTRRPBF | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF540NSTRLPBF vs IRF540NSTRRPBF |
| IRF540NSTRL | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRF540NSTRLPBF vs IRF540NSTRL |
| IRF540NS | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF540NSTRLPBF vs IRF540NS |