Part Details for IRF540NSTRR by International Rectifier
Overview of IRF540NSTRR by International Rectifier
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF540NSTRR
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1277 |
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RFQ | ||
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Quest Components | POWER FIELD-EFFECT TRANSISTOR, 33A I(D), 100V, 0.044OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET | 912 |
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$2.0625 / $3.7500 | Buy Now |
Part Details for IRF540NSTRR
IRF540NSTRR CAD Models
IRF540NSTRR Part Data Attributes
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IRF540NSTRR
International Rectifier
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Datasheet
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IRF540NSTRR
International Rectifier
Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3
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Pbfree Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 185 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 33 A | |
Drain-source On Resistance-Max | 0.044 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 110 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRF540NSTRR
This table gives cross-reference parts and alternative options found for IRF540NSTRR. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF540NSTRR, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF540NSTRRPBF | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF540NSTRR vs IRF540NSTRRPBF |
IRF540NSPBF | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF540NSTRR vs IRF540NSPBF |
IRF540NS | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | International Rectifier | IRF540NSTRR vs IRF540NS |
IRF540NSPBF | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF540NSTRR vs IRF540NSPBF |
IRF540NSTRLPBF | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | International Rectifier | IRF540NSTRR vs IRF540NSTRLPBF |
IRF540NSTRRPBF | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF540NSTRR vs IRF540NSTRRPBF |
IRF540NSTRL | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, D2PAK-3 | International Rectifier | IRF540NSTRR vs IRF540NSTRL |
IRF540NS | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF540NSTRR vs IRF540NS |
IRF540NSTRLPBF | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, PLASTIC, D2PAK-3 | Infineon Technologies AG | IRF540NSTRR vs IRF540NSTRLPBF |