Part Details for IRF5N3710 by Infineon Technologies AG
Overview of IRF5N3710 by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF5N3710
| Part # | Distributor | Description | Stock | Price | Buy | |
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Future Electronics | Single N-Channel 100 V 125 W 200 nC Hexfet Power Mosfet Surface Mount - SMD-1 RoHS: Non Compliant pbFree: No Min Qty: 10 Package Multiple: 1 Container: Box | 0Box |
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$165.2400 / $173.5100 | Buy Now |
Part Details for IRF5N3710
IRF5N3710 CAD Models
IRF5N3710 Part Data Attributes
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IRF5N3710
Infineon Technologies AG
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Datasheet
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IRF5N3710
Infineon Technologies AG
Power Field-Effect Transistor, 45A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | CHIP CARRIER, R-CBCC-N3 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 45 A | |
| Drain-source On Resistance-Max | 0.028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CBCC-N3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 125 W | |
| Pulsed Drain Current-Max (IDM) | 180 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF5N3710
This table gives cross-reference parts and alternative options found for IRF5N3710. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF5N3710, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF5N3710 | Power Field-Effect Transistor, 45A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | International Rectifier | IRF5N3710 vs IRF5N3710 |
| IRF5N3710PBF | Power Field-Effect Transistor, 45A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | International Rectifier | IRF5N3710 vs IRF5N3710PBF |