Part Details for IRF5N3710SCV by Infineon Technologies AG
Overview of IRF5N3710SCV by Infineon Technologies AG
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IRF5N3710SCV
| Part # | Distributor | Description | Stock | Price | Buy | |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 100 Package Multiple: 1 | 0 |
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$265.2000 | Buy Now |
Part Details for IRF5N3710SCV
IRF5N3710SCV CAD Models
IRF5N3710SCV Part Data Attributes
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IRF5N3710SCV
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF5N3710SCV
Infineon Technologies AG
Power Field-Effect Transistor, 45A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | HERMETIC SEALED, SMD-1, 3 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 250 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 45 A | |
| Drain-source On Resistance-Max | 0.028 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-CBCC-N3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | CHIP CARRIER | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 180 A | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | BOTTOM | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF5N3710SCV
This table gives cross-reference parts and alternative options found for IRF5N3710SCV. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF5N3710SCV, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF5N3710PBF | Power Field-Effect Transistor, 45A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | Infineon Technologies AG | IRF5N3710SCV vs IRF5N3710PBF |
| SNN4010D | 45A, 100V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, 3/2 PIN | Kodenshi Sensing | IRF5N3710SCV vs SNN4010D |
| IRF5N3710SCX | Power Field-Effect Transistor, 45A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | Infineon Technologies AG | IRF5N3710SCV vs IRF5N3710SCX |
| IRF5N3710 | Power Field-Effect Transistor, 45A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD-1, 3 PIN | Infineon Technologies AG | IRF5N3710SCV vs IRF5N3710 |
| HUF75637SMD05 | Power Field-Effect Transistor, 44A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AA, HERMETIC SEALED, SMD05, 3 PIN | TT Electronics Resistors | IRF5N3710SCV vs HUF75637SMD05 |
| 934057747127 | 49A, 100V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN | NXP Semiconductors | IRF5N3710SCV vs 934057747127 |
| IXTP44N10T | Power Field-Effect Transistor, | Littelfuse Inc | IRF5N3710SCV vs IXTP44N10T |
| HUF75637SMD05R | 44A, 100V, 0.03ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AA, HERMETIC SEALED, SMD05, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRF5N3710SCV vs HUF75637SMD05R |
| IRFN3710-JQR-B | 45A, 100V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-276AB, HERMETIC SEALED, SMD1, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | IRF5N3710SCV vs IRFN3710-JQR-B |
| SNN4010D | Power Field-Effect Transistor, 45A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, 3/2 PIN | Kodenshi Corporation | IRF5N3710SCV vs SNN4010D |