Datasheets
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IRF620FP by:
STMicroelectronics

Power Field-Effect Transistor, 6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Details for IRF620FP by STMicroelectronics

Results Overview of IRF620FP by STMicroelectronics

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

IRF620FP Information

IRF620FP by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for IRF620FP

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IRF620FP Part Data Attributes

IRF620FP STMicroelectronics
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IRF620FP STMicroelectronics Power Field-Effect Transistor, 6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Rohs Code Yes
Part Life Cycle Code Obsolete
Part Package Code TO-220AB
Package Description Rohs Compliant, To-220fp, 3 Pin
Pin Count 3
ECCN Code EAR99
Avalanche Energy Rating (Eas) 160 Mj
Case Connection Isolated
Configuration Single With Built-In Diode
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 6 A
Drain-source On Resistance-Max 0.8 Ω
FET Technology Metal-Oxide Semiconductor
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode Enhancement Mode
Operating Temperature-Max 150 °C
Package Body Material Plastic/Epoxy
Package Shape Rectangular
Package Style Flange Mount
Polarity/Channel Type N-Channel
Power Dissipation-Max (Abs) 30 W
Pulsed Drain Current-Max (IDM) 24 A
Qualification Status Not Qualified
Surface Mount No
Terminal Finish Matte Tin
Terminal Form Through-Hole
Terminal Position Single
Transistor Application Switching
Transistor Element Material Silicon
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