| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRF634 | Intersil Corporation | Check for Price | Power Field-Effect Transistor, 8.1A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | IRF634 vs IRF634 |
| IRF634 | Microsemi Corporation (now Microchip) | Check for Price | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 | IRF634 vs IRF634 |
| IRF634 | International Rectifier | Check for Price | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF634 vs IRF634 |
| IRF634 | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF634 vs IRF634 |
| IRF634PBF | International Rectifier | Check for Price | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF634 vs IRF634PBF |
| IRF634 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF634 vs IRF634 |
| IRF634 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF634 vs IRF634 |
| IRF634 | Vishay Intertechnologies | Check for Price | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | IRF634 vs IRF634 |
Part Details for IRF634 by STMicroelectronics
Results Overview of IRF634 by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (8 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (8 options)
- CAD Models: (Request Part)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRF634 Information
IRF634 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF634
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
IRF634ST-ND
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DigiKey | MOSFET N-CH 250V 8A TO220AB Min Qty: 1000 Container: Tube |
0 Tube |
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$0.7265 | Buy Now |
IRF634 Part Data Attributes
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IRF634
STMicroelectronics
Buy Now
Datasheet
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Compare Parts:
IRF634
STMicroelectronics
Power Field-Effect Transistor, 8A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | To-220, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 300 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 8 A | |
| Drain-source On Resistance-Max | 0.45 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 48 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 80 W | |
| Pulsed Drain Current-Max (IDM) | 32 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for IRF634
This table gives cross-reference parts and alternative options found for IRF634. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF634, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
IRF634 Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF634 is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal characteristics and voltage/current ratings. As a general rule, it's recommended to operate the device within the specified voltage and current limits to ensure reliable operation.
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To calculate the junction temperature of the IRF634, you can use the following formula: Tj = Ta + (Rθja * Pd), where Tj is the junction temperature, Ta is the ambient temperature, Rθja is the thermal resistance from junction to ambient, and Pd is the power dissipation. The thermal resistance values can be found in the datasheet.
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The recommended gate drive voltage for the IRF634 is typically between 10V to 15V, depending on the specific application and switching frequency. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI.
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Yes, the IRF634 is suitable for high-frequency switching applications up to several hundred kHz. However, it's essential to consider the device's switching characteristics, such as rise and fall times, and ensure that the gate drive circuitry is capable of providing a clean, high-frequency signal.
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To protect the IRF634 from overvoltage and overcurrent conditions, you can use a combination of voltage clamping devices, such as zener diodes or transient voltage suppressors, and current sensing resistors or fuses. Additionally, consider implementing overvoltage and overcurrent protection circuits, such as a crowbar circuit or an overcurrent detection circuit.