Select Manufacturer to View IRF635 Details
Select Manufacturer
| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| Samsung Semiconductor | Power Field-Effect Transistor, 6.5A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
View Details | |
| Thomson Consumer Electronics | Power Field-Effect Transistor, 6.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
|
View Details | |
| International Rectifier | Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
View Details | |
| Infineon Technologies AG | Power Field-Effect Transistor, 6.8A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
View Details | |
| Harris Semiconductor | Power Field-Effect Transistor, 6.5A I(D), 250V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
|
View Details | |
| Intersil Corporation | Power Field-Effect Transistor, 6.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
|
View Details |