Part Details for IRF640FP by STMicroelectronics
Results Overview of IRF640FP by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
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- CAD Models: (Request Part)
- Part Data Attributes: (Available)
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IRF640FP Information
IRF640FP by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRF640FP
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF640FP-ND
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DigiKey | MOSFET N-CH 200V 18A TO220FP Min Qty: 1000 Container: Tube |
0 Tube |
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$1.0832 | Buy Now |
IRF640FP Part Data Attributes
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IRF640FP
STMicroelectronics
Buy Now
Datasheet
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IRF640FP
STMicroelectronics
Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-220AB | |
| Package Description | Rohs Compliant, To-220fp, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 280 Mj | |
| Case Connection | Isolated | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 18 A | |
| Drain-source On Resistance-Max | 0.18 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 10 Pf | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 40 W | |
| Pulsed Drain Current-Max (IDM) | 72 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
IRF640FP Frequently Asked Questions (FAQ)
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The maximum safe operating area (SOA) for the IRF640FP is not explicitly stated in the datasheet, but it can be estimated based on the device's thermal and electrical characteristics. A safe operating area can be defined as the region where the device can operate without exceeding its maximum ratings. For the IRF640FP, a safe operating area can be estimated to be around 10V to 200V for the drain-source voltage and up to 20A for the drain current, depending on the application and operating conditions.
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To ensure proper thermal management of the IRF640FP, it is essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material (TIM) such as thermal paste or thermal tape, and ensuring that the heat sink is properly attached to the device. Additionally, the PCB should be designed to provide a good thermal path, and the device should be placed in a location that allows for good airflow. The maximum junction temperature (Tj) of the IRF640FP is 150°C, and it is recommended to keep the junction temperature below 125°C for reliable operation.
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The recommended gate drive voltage for the IRF640FP is between 10V to 15V. However, the optimal gate drive voltage may vary depending on the specific application and operating conditions. A higher gate drive voltage can result in faster switching times, but it may also increase the power consumption and EMI. A lower gate drive voltage can reduce power consumption and EMI, but it may result in slower switching times.
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Yes, the IRF640FP can be used in high-frequency switching applications, but it is essential to consider the device's switching characteristics and ensure that the application is within the device's capabilities. The IRF640FP has a typical rise time (tr) of 15ns and a typical fall time (tf) of 30ns, making it suitable for high-frequency switching applications up to several hundred kHz. However, the device's switching characteristics may degrade at higher frequencies, and it is recommended to consult the datasheet and application notes for more information.
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To protect the IRF640FP from overvoltage and overcurrent, it is recommended to use a combination of voltage and current limiting devices, such as voltage regulators, current sensors, and protection diodes. Additionally, the device should be operated within its recommended operating conditions, and the application should be designed to prevent overvoltage and overcurrent conditions. It is also recommended to use a gate driver with built-in protection features, such as overcurrent protection and undervoltage lockout.