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Transistors Power Field-Effect Transistors IRF644

Transistors
IRF644
Description: Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

Overview of IRF644 by Samsung Semiconductor

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Part Data Attributes for IRF644 by Samsung Semiconductor
Parametric Data

IRF644
Samsung Semiconductor
Buy Now
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
SAMSUNG SEMICONDUCTOR INC
Part Package Code
SFM
Package Description
TO-220, 3 PIN
Pin Count
3
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
550 mJ
Configuration
SINGLE
DS Breakdown Voltage-Min
250 V
Drain Current-Max (ID)
14 A
Drain-source On Resistance-Max
0.28 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
125 W
Power Dissipation-Max (Abs)
125 W
Pulsed Drain Current-Max (IDM)
56 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
154 ns
Turn-on Time-Max (ton)
120 ns
Want to compare parts?
  1. IRF644
    Samsung Semiconductor
    Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
    VS

Alternate Parts for IRF644

This table gives cross-reference parts and alternative options found for IRF644. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF644, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF644PBF Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix IRF644 vs IRF644PBF
MTP16N25E 16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN Rochester Electronics LLC IRF644 vs MTP16N25E
IRF644 14A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF644 vs IRF644
BUZ255 Power Field-Effect Transistor, 13A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens IRF644 vs BUZ255
IRF644PBF Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRF644 vs IRF644PBF
IRF644 Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF644 vs IRF644
MTP16N25E 16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF644 vs MTP16N25E
IRF644 14A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF644 vs IRF644
IRF644 Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Siliconix IRF644 vs IRF644
STP16NB25 16A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics IRF644 vs STP16NB25
Part Number Description Manufacturer Compare
STP16NB25 16A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics IRF644 vs STP16NB25
MTP16N25E 16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN onsemi IRF644 vs MTP16N25E
IRF644 14A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC IRF644 vs IRF644
MTP16N25E 16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN Rochester Electronics LLC IRF644 vs MTP16N25E
MTP16N25E 16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRF644 vs MTP16N25E
IRF644PBF Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRF644 vs IRF644PBF
IRF644 Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRF644 vs IRF644
IRF644 Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Siliconix IRF644 vs IRF644
IRF644 14A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRF644 vs IRF644
IRF644PBF Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN Vishay Siliconix IRF644 vs IRF644PBF

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