Datasheets
MTP16N25E by:

16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Details for MTP16N25E by Motorola Mobility LLC

Overview of MTP16N25E by Motorola Mobility LLC

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Part Details for MTP16N25E

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MTP16N25E Part Data Attributes:

MTP16N25E Motorola Mobility LLC
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MTP16N25E Motorola Mobility LLC 16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Part Life Cycle Code Transferred
Ihs Manufacturer MOTOROLA INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 384 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 250 V
Drain Current-Max (ID) 16 A
Drain-source On Resistance-Max 0.25 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 260 pF
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 56 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 200 ns
Turn-on Time-Max (ton) 160 ns

Alternate Parts for MTP16N25E

This table gives cross-reference parts and alternative options found for MTP16N25E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTP16N25E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUZ255 Power Field-Effect Transistor, 13A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens MTP16N25E vs BUZ255
IRF644 Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor MTP16N25E vs IRF644
STP16NB25 16A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics MTP16N25E vs STP16NB25
IRF644PBF Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier MTP16N25E vs IRF644PBF
IRF644 Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier MTP16N25E vs IRF644
MTP16N25E 16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN Rochester Electronics LLC MTP16N25E vs MTP16N25E
IRF644 14A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC MTP16N25E vs IRF644
Part Number Description Manufacturer Compare
IRF644 14A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Rochester Electronics LLC MTP16N25E vs IRF644
BUZ255 Power Field-Effect Transistor, 13A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB Siemens MTP16N25E vs BUZ255
IRF644 Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor MTP16N25E vs IRF644
STP16NB25 16A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics MTP16N25E vs STP16NB25
IRF644 Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier MTP16N25E vs IRF644
IRF644PBF Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier MTP16N25E vs IRF644PBF
MTP16N25E 16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN Rochester Electronics LLC MTP16N25E vs MTP16N25E

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