Part Details for MTP16N25E by Rochester Electronics LLC
Overview of MTP16N25E by Rochester Electronics LLC
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (7 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (7 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for MTP16N25E
MTP16N25E CAD Models
MTP16N25E Part Data Attributes:
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MTP16N25E
Rochester Electronics LLC
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Datasheet
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MTP16N25E
Rochester Electronics LLC
16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-06, 3 PIN
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ROCHESTER ELECTRONICS LLC | |
| Part Package Code | TO-220AB | |
| Package Description | CASE 221A-06, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | CASE 221A-06 | |
| Reach Compliance Code | unknown | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 384 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 250 V | |
| Drain Current-Max (ID) | 16 A | |
| Drain-source On Resistance-Max | 0.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | NOT SPECIFIED | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 56 A | |
| Qualification Status | COMMERCIAL | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for MTP16N25E
This table gives cross-reference parts and alternative options found for MTP16N25E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of MTP16N25E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTP16N25E | 16A, 250V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Motorola Mobility LLC | MTP16N25E vs MTP16N25E |
| BUZ255 | Power Field-Effect Transistor, 13A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | Siemens | MTP16N25E vs BUZ255 |
| IRF644 | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Samsung Semiconductor | MTP16N25E vs IRF644 |
| STP16NB25 | 16A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN | STMicroelectronics | MTP16N25E vs STP16NB25 |
| IRF644PBF | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 | International Rectifier | MTP16N25E vs IRF644PBF |
| IRF644 | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | International Rectifier | MTP16N25E vs IRF644 |
| IRF644 | 14A, 250V, 0.28ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | MTP16N25E vs IRF644 |