Part Details for IRF712-013PBF by International Rectifier
Results Overview of IRF712-013PBF by International Rectifier
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IRF712-013PBF Information
IRF712-013PBF by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
IRF712-013PBF Part Data Attributes
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IRF712-013PBF
International Rectifier
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Datasheet
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IRF712-013PBF
International Rectifier
Power Field-Effect Transistor, 1.7A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| ECCN Code | EAR99 | |
| Case Connection | Drain | |
| Configuration | Single | |
| DS Breakdown Voltage-Min | 400 V | |
| Drain Current-Max (ID) | 1.7 A | |
| Drain-source On Resistance-Max | 5 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Pulsed Drain Current-Max (IDM) | 4.3 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Matte Tin Over Nickel | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Element Material | Silicon |