There are no models available for this part yet.
Overview of IRF7316GPBF by Infineon Technologies AG
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
CAD Models for IRF7316GPBF by Infineon Technologies AG
Part Data Attributes for IRF7316GPBF by Infineon Technologies AG
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Rohs Code
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Yes
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Part Life Cycle Code
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Active
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Ihs Manufacturer
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INFINEON TECHNOLOGIES AG
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Package Description
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SMALL OUTLINE, R-PDSO-G8
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Reach Compliance Code
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compliant
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ECCN Code
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EAR99
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Additional Feature
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AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
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Avalanche Energy Rating (Eas)
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140 mJ
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Configuration
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SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min
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30 V
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Drain Current-Max (ID)
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4.9 A
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Drain-source On Resistance-Max
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0.058 Ω
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FET Technology
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METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
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MS-012AA
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JESD-30 Code
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R-PDSO-G8
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Number of Elements
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2
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Number of Terminals
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8
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Peak Reflow Temperature (Cel)
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260
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Polarity/Channel Type
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P-CHANNEL
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Power Dissipation-Max (Abs)
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2 W
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Pulsed Drain Current-Max (IDM)
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30 A
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Qualification Status
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Not Qualified
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Surface Mount
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YES
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Terminal Form
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GULL WING
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Terminal Position
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DUAL
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Time@Peak Reflow Temperature-Max (s)
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40
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Alternate Parts for IRF7316GPBF
This table gives cross-reference parts and alternative options found for IRF7316GPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7316GPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7316PBF | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | IRF7316GPBF vs IRF7316PBF |
| TSM4953DCSRL | Power Field-Effect Transistor | Taiwan Semiconductor | IRF7316GPBF vs TSM4953DCSRL |
| IRF7316 | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | IRF7316GPBF vs IRF7316 |
| IRF7316PBF | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | IRF7316GPBF vs IRF7316PBF |
| IRF7316TRPBF-1 | Power Field-Effect Transistor, P-Channel, Metal-Oxide Semiconductor FET | Infineon Technologies AG | IRF7316GPBF vs IRF7316TRPBF-1 |
| IRF7316TR | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | IRF7316GPBF vs IRF7316TR |
| TSM4953DCSRFG | Power Field-Effect Transistor | Taiwan Semiconductor | IRF7316GPBF vs TSM4953DCSRFG |
| TSM4953DCSRF | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.06ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 | Taiwan Semiconductor | IRF7316GPBF vs TSM4953DCSRF |
| IRF7316TRPBF | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | IRF7316GPBF vs IRF7316TRPBF |
| IRF7316QTRPBF | Transistor, | Infineon Technologies AG | IRF7316GPBF vs IRF7316QTRPBF |