Part Details for IRF7316PBF by Infineon Technologies AG
Overview of IRF7316PBF by Infineon Technologies AG
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF7316PBF
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IRF7316PBF-ND
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DigiKey | MOSFET 2P-CH 30V 4.9A 8SO Lead time: 98 Weeks Container: Tube | Limited Supply - Call |
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Buy Now | |
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Rochester Electronics | IRF7316 - P Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 124 |
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$0.3564 / $0.4193 | Buy Now |
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Win Source Electronics | HEXFET®Power MOSFET | MOSFET 2P-CH 30V 4.9A 8-SOIC | 158000 |
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$0.3580 / $0.5370 | Buy Now |
Part Details for IRF7316PBF
IRF7316PBF CAD Models
IRF7316PBF Part Data Attributes
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IRF7316PBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7316PBF
Infineon Technologies AG
Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SMALL OUTLINE, R-PDSO-G8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
| Avalanche Energy Rating (Eas) | 140 mJ | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 4.9 A | |
| Drain-source On Resistance-Max | 0.058 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2 W | |
| Pulsed Drain Current-Max (IDM) | 30 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7316PBF
This table gives cross-reference parts and alternative options found for IRF7316PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7316PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| UTM4953L-S08-R | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.06ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Unisonic Technologies Co Ltd | IRF7316PBF vs UTM4953L-S08-R |
| IRF7316PBF | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | IRF7316PBF vs IRF7316PBF |
| IRF7316TRPBF-1 | Power Field-Effect Transistor, P-Channel, Metal-Oxide Semiconductor FET | Infineon Technologies AG | IRF7316PBF vs IRF7316TRPBF-1 |
| IRF7316QPBF | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 | Infineon Technologies AG | IRF7316PBF vs IRF7316QPBF |
| IRF7316 | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | IRF7316PBF vs IRF7316 |
| IRF7316TRPBF | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | IRF7316PBF vs IRF7316TRPBF |
| IRF7316TRPBF | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | IRF7316PBF vs IRF7316TRPBF |
| IRF7316TR | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | IRF7316PBF vs IRF7316TR |
| IRF7316 | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | IRF7316PBF vs IRF7316 |
| TSM4953DCSRFG | Power Field-Effect Transistor | Taiwan Semiconductor | IRF7316PBF vs TSM4953DCSRFG |