There are no models available for this part yet.
Overview of UTM4953G-H-S08-R by Unisonic Technologies Co Ltd
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Education and Research
Consumer Electronics
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Entertainment and Gaming
Available Datasheets
| Part # | Manufacturer | Description | Datasheet |
|---|---|---|---|
| 54102-S08-00 | Amphenol Communications Solutions | 54102-S08-00-BERGSTIK 0.100 HDR | |
| 54102-S08-02 | Amphenol Communications Solutions | 54102-S08-02-B/S 0.100 HDR | |
| 54102-S08-18 | Amphenol Communications Solutions | 54102-S08-18-B/S 0.100 HDR |
CAD Models for UTM4953G-H-S08-R by Unisonic Technologies Co Ltd
Part Data Attributes for UTM4953G-H-S08-R by Unisonic Technologies Co Ltd
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|
|
|---|---|
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Rohs Code
|
Yes
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|
Part Life Cycle Code
|
Active
|
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Ihs Manufacturer
|
UNISONIC TECHNOLOGIES CO LTD
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|
Package Description
|
,
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Reach Compliance Code
|
compliant
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ECCN Code
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EAR99
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Configuration
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SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
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|
DS Breakdown Voltage-Min
|
30 V
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Drain Current-Max (ID)
|
5 A
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Drain-source On Resistance-Max
|
0.055 Ω
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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Feedback Cap-Max (Crss)
|
60 pF
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JESD-30 Code
|
R-PDSO-G8
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Number of Elements
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2
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Number of Terminals
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8
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Operating Mode
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ENHANCEMENT MODE
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Operating Temperature-Max
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150 °C
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Operating Temperature-Min
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-55 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
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SMALL OUTLINE
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Peak Reflow Temperature (Cel)
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NOT SPECIFIED
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Polarity/Channel Type
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P-CHANNEL
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|
Power Dissipation-Max (Abs)
|
2.1 W
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Pulsed Drain Current-Max (IDM)
|
20 A
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Surface Mount
|
YES
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Terminal Form
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GULL WING
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Terminal Position
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DUAL
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Time@Peak Reflow Temperature-Max (s)
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NOT SPECIFIED
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Transistor Application
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SWITCHING
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Transistor Element Material
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SILICON
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Turn-off Time-Max (toff)
|
64 ns
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Turn-on Time-Max (ton)
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27 ns
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Alternate Parts for UTM4953G-H-S08-R
This table gives cross-reference parts and alternative options found for UTM4953G-H-S08-R. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of UTM4953G-H-S08-R, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7316PBF | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | UTM4953G-H-S08-R vs IRF7316PBF |
| IRF7316GPBF | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 | Infineon Technologies AG | UTM4953G-H-S08-R vs IRF7316GPBF |
| TSM4953DCSRL | Power Field-Effect Transistor | Taiwan Semiconductor | UTM4953G-H-S08-R vs TSM4953DCSRL |
| IRF7316 | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | Infineon Technologies AG | UTM4953G-H-S08-R vs IRF7316 |
| IRF7316PBF | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | International Rectifier | UTM4953G-H-S08-R vs IRF7316PBF |
| IRF7316TRPBF-1 | Power Field-Effect Transistor, P-Channel, Metal-Oxide Semiconductor FET | Infineon Technologies AG | UTM4953G-H-S08-R vs IRF7316TRPBF-1 |
| IRF7316TR | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | UTM4953G-H-S08-R vs IRF7316TR |
| TSM4953DCSRFG | Power Field-Effect Transistor | Taiwan Semiconductor | UTM4953G-H-S08-R vs TSM4953DCSRFG |
| TSM4953DCSRF | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.06ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 | Taiwan Semiconductor | UTM4953G-H-S08-R vs TSM4953DCSRF |
| IRF7316TRPBF | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 | International Rectifier | UTM4953G-H-S08-R vs IRF7316TRPBF |