IRF7413PBF-1
Description: Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Overview of IRF7413PBF-1 by International Rectifier

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Part Data Attributes for IRF7413PBF-1 by International Rectifier

IRF7413PBF-1
International Rectifier
-
-
Rohs Code
Yes
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Package Description
SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code
unknown
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
260 mJ
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
13 A
Drain-source On Resistance-Max
0.011 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
MS-012AA
JESD-30 Code
R-PDSO-G8
Number of Elements
1
Number of Terminals
8
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
2.5 W
Pulsed Drain Current-Max (IDM)
58 A
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Element Material
SILICON
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    International Rectifier
    Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
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Alternate Parts for IRF7413PBF-1

This table gives cross-reference parts and alternative options found for IRF7413PBF-1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7413PBF-1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF7413Z Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 International Rectifier IRF7413PBF-1 vs IRF7413Z
IRF7413PBF-1 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, Infineon Technologies AG IRF7413PBF-1 vs IRF7413PBF-1
IRF7413PBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 Infineon Technologies AG IRF7413PBF-1 vs IRF7413PBF
IRF7413QPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7413PBF-1 vs IRF7413QPBF
IRF7413UPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7413PBF-1 vs IRF7413UPBF
IRF7413UTRPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8 International Rectifier IRF7413PBF-1 vs IRF7413UTRPBF
IRF7413ZGPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 Infineon Technologies AG IRF7413PBF-1 vs IRF7413ZGPBF
IRF7413ZGPBF Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN AND LEAD FREE, SOP-8 International Rectifier IRF7413PBF-1 vs IRF7413ZGPBF
IRF7413TRPBF-1 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, International Rectifier IRF7413PBF-1 vs IRF7413TRPBF-1
IRF7413TR Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8 Infineon Technologies AG IRF7413PBF-1 vs IRF7413TR
Part Number Description Manufacturer Compare
FSS232 Power Field-Effect Transistor, 9A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 SANYO Electric Co Ltd IRF7413PBF-1 vs FSS232
RF1S50N06 50A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA Rochester Electronics LLC IRF7413PBF-1 vs RF1S50N06
2SK2442 Power Field-Effect Transistor, 7A I(D), 30V, 0.048ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET SANYO Electric Co Ltd IRF7413PBF-1 vs 2SK2442
2SK2556 Power Field-Effect Transistor, 6A I(D), 30V, 0.078ohm, N-Channel, Silicon, Metal-oxide Semiconductor FET SANYO Electric Co Ltd IRF7413PBF-1 vs 2SK2556
SI4890DY-T1-E3 Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Intertechnologies IRF7413PBF-1 vs SI4890DY-T1-E3
UPA1700A 7A, 30V, 0.05ohm, N-CHANNEL, Si, POWER, MOSFET, SOP-8 Renesas Electronics Corporation IRF7413PBF-1 vs UPA1700A
PHN1018 TRANSISTOR 9.6 A, 25 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power NXP Semiconductors IRF7413PBF-1 vs PHN1018
SI4800 TRANSISTOR 9 A, 30 V, 0.0185 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLASTIC, SO-8, FET General Purpose Power NXP Semiconductors IRF7413PBF-1 vs SI4800
PHN1011 TRANSISTOR 11 A, 25 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA, PLATIC, SO-8, FET General Purpose Power NXP Semiconductors IRF7413PBF-1 vs PHN1011
IRF7842PBF Small Signal Field-Effect Transistor, 18A I(D), 40V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 International Rectifier IRF7413PBF-1 vs IRF7842PBF

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