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Part Details for IRF7832TRPBF by Infineon Technologies AG
Overview of IRF7832TRPBF by Infineon Technologies AG
- Distributor Offerings: (21 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (9 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRF7832TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
39M3588
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Newark | Mosfet, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:20A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.32V, Power Dissipation:2.5W Rohs Compliant: Yes |Infineon IRF7832TRPBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.7350 / $1.7100 | Buy Now |
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DISTI #
IRF7832PBFCT-ND
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DigiKey | MOSFET N-CH 30V 20A 8SO Min Qty: 1 Lead time: 12 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
37790 In Stock |
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$0.6198 / $1.6500 | Buy Now |
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DISTI #
IRF7832TRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 20A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7832TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 4000 |
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$0.5774 / $0.6598 | Buy Now |
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DISTI #
IRF7832TRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 20A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7832TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.5774 / $0.6598 | Buy Now |
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DISTI #
942-IRF7832TRPBF
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Mouser Electronics | MOSFET MOSFT 30V 20A 4mOhm 34nC RoHS: Compliant | 9748 |
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$0.6190 / $1.6500 | Buy Now |
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DISTI #
70017726
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RS | MOSFET, Power, N-Ch, VDSS 30V, RDS(ON) 3.1 Milliohms, ID 20A, SO-8,PD 2.5W, VGS +/-20V | Infineon IRF7832TRPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$1.3600 / $1.6000 | RFQ |
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Future Electronics | Single N-Channel 30V 4.8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Container: Reel | 40000Reel |
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$0.5050 / $0.5300 | Buy Now |
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Future Electronics | Single N-Channel 30V 4.8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Container: Reel | 36000Reel |
|
$0.4800 / $0.5000 | Buy Now |
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Quest Components | 20 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA | 3237 |
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$0.8400 / $2.2400 | Buy Now |
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Rochester Electronics | IRF7832PbF - N-Channel HEXFET Power MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 2950 |
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$0.6134 / $0.7217 | Buy Now |
Part Details for IRF7832TRPBF
IRF7832TRPBF CAD Models
IRF7832TRPBF Part Data Attributes
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IRF7832TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7832TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, SOP-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | GREEN, SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 260 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 20 A | |
| Drain-source On Resistance-Max | 0.004 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 450 pF | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 155 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 2.5 W | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 160 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7832TRPBF
This table gives cross-reference parts and alternative options found for IRF7832TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7832TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7832TR | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | International Rectifier | IRF7832TRPBF vs IRF7832TR |
| IRF7832 | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | Infineon Technologies AG | IRF7832TRPBF vs IRF7832 |
| IRF7832PBF | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8 | Infineon Technologies AG | IRF7832TRPBF vs IRF7832PBF |