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Distributor Offerings: (
0 listings
)
Number of FFF Equivalents: (
0 replacements
)
CAD Models: (
Available
)
Number of Functional Equivalents: (
8 options
)
Part Data Attributes (
Available
)
Reference Designs: (
Not Available
)
Where used in Applications:
Industrial Automation
Motor control systems
Part Symbol
Footprint
3D Model
Avalanche Energy Rating (Eas)
SINGLE WITH BUILT-IN DIODE
Drain-source On Resistance-Max
METAL-OXIDE SEMICONDUCTOR
Moisture Sensitivity Level
Operating Temperature-Max
Operating Temperature-Min
Peak Reflow Temperature (Cel)
Power Dissipation-Max (Abs)
Pulsed Drain Current-Max (IDM)
Time@Peak Reflow Temperature-Max (s)
Transistor Element Material
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Infineon Technologies AG
Power Field-Effect Transistor, 21A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEADFREE, SO-8
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IRF7832PBF - International Rectifier
IRF7862PBF - International Rectifier
IRF7862TRPBF - Infineon Technologies AG
IRF7832 - Infineon Technologies AG
IRF7832TRPBF - International Rectifier
IRF7832TR - International Rectifier
IRF7832PBF - Infineon Technologies AG
IRF7832TR - Infineon Technologies AG
This table gives cross-reference parts and alternative options found for IRF7862PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7862PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number
Description
Manufacturer
Compare
IRF7832PBF
Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
International Rectifier
IRF7862PBF vs IRF7832PBF
IRF7862PBF
Power Field-Effect Transistor, 21A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEADFREE, SO-8
International Rectifier
IRF7862PBF vs IRF7862PBF
IRF7862TRPBF
Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
Infineon Technologies AG
IRF7862PBF vs IRF7862TRPBF
IRF7832
Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
Infineon Technologies AG
IRF7862PBF vs IRF7832
IRF7832TRPBF
Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
International Rectifier
IRF7862PBF vs IRF7832TRPBF
IRF7832TR
Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
International Rectifier
IRF7862PBF vs IRF7832TR
IRF7832PBF
Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SO-8
Infineon Technologies AG
IRF7862PBF vs IRF7832PBF
IRF7832TR
Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
Infineon Technologies AG
IRF7862PBF vs IRF7832TR