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Part Details for IRF7862TRPBF by Infineon Technologies AG
Overview of IRF7862TRPBF by Infineon Technologies AG
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (1 replacement)
- CAD Models: (Available)
- Number of Functional Equivalents: (8 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Industrial Automation
Motor control systems
Price & Stock for IRF7862TRPBF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
32AC7476
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Newark | Mosfet, N-Ch, 30V, 21A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:21A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.35V Rohs Compliant: Yes |Infineon IRF7862TRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.6230 / $1.3000 | Buy Now |
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DISTI #
IRF7862TRPBFCT-ND
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DigiKey | MOSFET N-CH 30V 21A 8SO Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
16184 In Stock |
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$0.3960 / $1.5800 | Buy Now |
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DISTI #
IRF7862TRPBF
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Avnet Americas | Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF7862TRPBF) RoHS: Compliant Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
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$0.3003 | Buy Now |
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DISTI #
942-IRF7862TRPBF
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Mouser Electronics | MOSFETs MOSFT 30V 21A 3.3mOhm 30nC Qg RoHS: Compliant | 2819 |
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$0.3960 / $1.2600 | Buy Now |
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DISTI #
70017883
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RS | MOSFET, N Ch., 30V, 21A, 3.7 MOHM, 30 NC QG, SO-8, Pb-Free | Infineon IRF7862TRPBF RoHS: Not Compliant Min Qty: 10 Package Multiple: 1 Container: Bulk | 0 |
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$0.7900 | RFQ |
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Future Electronics | Single N-Channel 30 V 4.5 mOhm 45 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks Container: Reel | 40000Reel |
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$0.3900 / $0.4050 | Buy Now |
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Future Electronics | Single N-Channel 30 V 4.5 mOhm 45 nC HEXFET® Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 4000 Package Multiple: 4000 Lead time: 12 Weeks Container: Reel | 0Reel |
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$0.3900 / $0.4050 | Buy Now |
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DISTI #
IRF7862TRPBF
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TME | Transistor: N-MOSFET, unipolar, 30V, 21A, 2.5W, SO8 Min Qty: 4000 | 0 |
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$0.3630 | RFQ |
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Ameya Holding Limited | Single N-Channel 30 V 4.5 mOhm 45 nC HEXFET® Power Mosfet - SOIC-8 | 1954 |
|
RFQ | |
|
DISTI #
C1S322000486652
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Chip1Stop | Trans MOSFET N-CH 30V 21A 8-Pin SOIC T/R RoHS: Compliant pbFree: Yes | 4000 |
|
$0.3650 | Buy Now |
Part Details for IRF7862TRPBF
IRF7862TRPBF CAD Models
IRF7862TRPBF Part Data Attributes
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IRF7862TRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRF7862TRPBF
Infineon Technologies AG
Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | SOP-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 12 Weeks | |
| Samacsys Manufacturer | Infineon | |
| Avalanche Energy Rating (Eas) | 350 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 21 A | |
| Drain-source On Resistance-Max | 0.0033 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Pulsed Drain Current-Max (IDM) | 170 A | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRF7862TRPBF
This table gives cross-reference parts and alternative options found for IRF7862TRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF7862TRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRF7862PBF | Power Field-Effect Transistor, 21A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEADFREE, SO-8 | Infineon Technologies AG | IRF7862TRPBF vs IRF7862PBF |