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| Manufacturer | Description | Price Range | Set Alert | Details |
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| International Rectifier | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | $12.0000 / $23.1416 |
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| Infineon Technologies AG | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | $21.3400 / $22.4000 |
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| Harris Semiconductor | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | $15.7250 / $19.1250 |
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| Hitachi Ltd | POWER FIELD-EFFECT TRANSISTOR, 11A I(D), 100V, 0.35OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-204AA | $16.0000 / $18.0000 |
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| Vishay Siliconix | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 |
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| TT Electronics Power and Hybrid / Semelab Limited | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 |
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| Samsung Semiconductor | Transistor |
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| Thomson Consumer Electronics | Transistor |
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| TT Electronics Resistors | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3 |
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| Intersil Corporation | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA |
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| Rochester Electronics LLC | 11A, 100V, 0.35ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN |
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