IRF9231
Description: Power Field-Effect Transistor, 6.5A I(D), 150V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Overview of IRF9231 by Harris Semiconductor

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Part Data Attributes for IRF9231 by Harris Semiconductor

IRF9231
Harris Semiconductor
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
HARRIS SEMICONDUCTOR
Package Description
FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code
unknown
ECCN Code
EAR99
HTS Code
8541.29.00.95
Avalanche Energy Rating (Eas)
500 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
150 V
Drain Current-Max (ID)
6.5 A
Drain-source On Resistance-Max
0.8 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-204AA
JESD-30 Code
O-MBFM-P2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
FLANGE MOUNT
Polarity/Channel Type
P-CHANNEL
Power Dissipation Ambient-Max
75 W
Power Dissipation-Max (Abs)
75 W
Pulsed Drain Current-Max (IDM)
26 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
PIN/PEG
Terminal Position
BOTTOM
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Turn-off Time-Max (toff)
180 ns
Turn-on Time-Max (ton)
150 ns
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  1. IRF9231
    Harris Semiconductor
    Power Field-Effect Transistor, 6.5A I(D), 150V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
    VS

Alternate Parts for IRF9231

This table gives cross-reference parts and alternative options found for IRF9231. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRF9231, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRF9231 Power Field-Effect Transistor, 6.5A I(D), 150V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF9231 vs IRF9231
IRF9231 Power Field-Effect Transistor, 6.5A I(D), 150V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 Vishay Siliconix IRF9231 vs IRF9231
IRF9231 6.5A, 150V, 0.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA Intersil Corporation IRF9231 vs IRF9231
Part Number Description Manufacturer Compare
IRF9230 6.5A, 200V, 0.92ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Rochester Electronics LLC IRF9231 vs IRF9230
IRF9232 Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF9231 vs IRF9232
IRF9240SMD-JQR-B Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-276AB, CERAMIC, SMD1, 3 PIN TT Electronics Resistors IRF9231 vs IRF9240SMD-JQR-B
IRF9240ED Power Field-Effect Transistor, 11A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, Infineon Technologies AG IRF9231 vs IRF9240ED
IRF9240 11A, 200V, 0.58ohm, P-CHANNEL, Si, POWER, MOSFET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Rochester Electronics LLC IRF9231 vs IRF9240
MTM8P20 Power Field-Effect Transistor, 8A I(D), 200V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Motorola Semiconductor Products IRF9231 vs MTM8P20
IRF9240PBF Power Field-Effect Transistor, 11A I(D), 200V, 0.58ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN Infineon Technologies AG IRF9231 vs IRF9240PBF
IRF9232 Power Field-Effect Transistor, 5.5A I(D), 200V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF9231 vs IRF9232
2N6806PBF Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA International Rectifier IRF9231 vs 2N6806PBF
RFM5P12 Power Field-Effect Transistor, 5A I(D), 120V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA Harris Semiconductor IRF9231 vs RFM5P12

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