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Transistors Power Field-Effect Transistors IRFBC40LC

IRFBC40LC
Description: Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Overview of IRFBC40LC by International Rectifier

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for IRFBC40LC by International Rectifier

Part # Manufacturer Description Stock Price Buy
Bristol Electronics   Min Qty: 2 197
  • 2 $2.9120
  • 10 $1.8928
  • 28 $1.4560
  • 87 $1.3590
  • 185 $1.2618
$1.2618 / $2.9120 Buy Now
Quest Components 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 157
  • 1 $3.9000
  • 11 $1.9500
  • 104 $1.8200
$1.8200 / $3.9000 Buy Now
Quest Components 6.2 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 5
  • 1 $11.2500
  • 2 $7.5000
  • 4 $5.6250
$5.6250 / $11.2500 Buy Now

CAD Models for IRFBC40LC by International Rectifier
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Part Data Attributes for IRFBC40LC by International Rectifier
Parametric Data

IRFBC40LC
International Rectifier
Buy Now
-
-
Pbfree Code
No
Rohs Code
No
Part Life Cycle Code
Transferred
Ihs Manufacturer
INTERNATIONAL RECTIFIER CORP
Package Description
FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code
compliant
ECCN Code
EAR99
HTS Code
8541.29.00.95
Case Connection
DRAIN
Configuration
SINGLE
DS Breakdown Voltage-Min
600 V
Drain Current-Max (ID)
6.2 A
Drain-source On Resistance-Max
1.2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-220AB
JESD-30 Code
R-PSFM-T3
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation Ambient-Max
125 W
Power Dissipation-Max (Abs)
125 W
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Finish
TIN LEAD
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFBC40LC
    International Rectifier
    Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    VS

Alternate Parts for IRFBC40LC

This table gives cross-reference parts and alternative options found for IRFBC40LC. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBC40LC, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFBC40PBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRFBC40LC vs IRFBC40PBF
STP7NB60 7.2A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics IRFBC40LC vs STP7NB60
MTP6N60E 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN onsemi IRFBC40LC vs MTP6N60E
SSP7N60 Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IRFBC40LC vs SSP7N60
IRFBC42 Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Infineon Technologies AG IRFBC40LC vs IRFBC42
IRFBC40 6.2A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Rochester Electronics LLC IRFBC40LC vs IRFBC40
IRFBC40 6.2A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRFBC40LC vs IRFBC40
IRFBC42PBF Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFBC40LC vs IRFBC42PBF
MTP6N60 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRFBC40LC vs MTP6N60
IRFBC42 Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFBC40LC vs IRFBC42
Part Number Description Manufacturer Compare
IRFBC42 Power Field-Effect Transistor, 5.4A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Harris Semiconductor IRFBC40LC vs IRFBC42
IRFBC40 Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFBC40LC vs IRFBC40
MTP6N60E 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN onsemi IRFBC40LC vs MTP6N60E
BUK457-600B TRANSISTOR 7.1 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors IRFBC40LC vs BUK457-600B
IRFBC42PBF Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFBC40LC vs IRFBC42PBF
SSP7N60 Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRFBC40LC vs SSP7N60
IRFBC40 Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Siliconix IRFBC40LC vs IRFBC40
MTP6N60 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRFBC40LC vs MTP6N60
IRFBC40PBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRFBC40LC vs IRFBC40PBF
IRFBC42 Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFBC40LC vs IRFBC42

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