Datasheets
IRFBC42PBF by:

5.5A, 600V, 1.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

Part Details for IRFBC42PBF by Infineon Technologies AG

Overview of IRFBC42PBF by Infineon Technologies AG

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Part Details for IRFBC42PBF

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IRFBC42PBF Part Data Attributes

IRFBC42PBF Infineon Technologies AG
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IRFBC42PBF Infineon Technologies AG 5.5A, 600V, 1.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 1.6 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for IRFBC42PBF

This table gives cross-reference parts and alternative options found for IRFBC42PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFBC42PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFBC40PBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRFBC42PBF vs IRFBC40PBF
STP7NB60 7.2A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN STMicroelectronics IRFBC42PBF vs STP7NB60
MTP6N60E 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN onsemi IRFBC42PBF vs MTP6N60E
SSP7N60 Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Fairchild Semiconductor Corporation IRFBC42PBF vs SSP7N60
IRFBC42 Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, Infineon Technologies AG IRFBC42PBF vs IRFBC42
IRFBC40 6.2A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220AB, 3 PIN Rochester Electronics LLC IRFBC42PBF vs IRFBC40
IRFBC40 6.2A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Intersil Corporation IRFBC42PBF vs IRFBC40
IRFBC42PBF Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFBC42PBF vs IRFBC42PBF
MTP6N60 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRFBC42PBF vs MTP6N60
IRFBC42 Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFBC42PBF vs IRFBC42
Part Number Description Manufacturer Compare
IRFBC42 Power Field-Effect Transistor, 5.4A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN Harris Semiconductor IRFBC42PBF vs IRFBC42
IRFBC40 Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFBC42PBF vs IRFBC40
MTP6N60E 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, CASE 221A-09, 3 PIN onsemi IRFBC42PBF vs MTP6N60E
BUK457-600B TRANSISTOR 7.1 A, 600 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power NXP Semiconductors IRFBC42PBF vs BUK457-600B
IRFBC42PBF Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFBC42PBF vs IRFBC42PBF
SSP7N60 Power Field-Effect Transistor, 7A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Samsung Semiconductor IRFBC42PBF vs SSP7N60
IRFBC40 Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Vishay Siliconix IRFBC42PBF vs IRFBC40
MTP6N60 6A, 600V, 1.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB Motorola Mobility LLC IRFBC42PBF vs MTP6N60
IRFBC40PBF Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 International Rectifier IRFBC42PBF vs IRFBC40PBF
IRFBC42 Power Field-Effect Transistor, 5.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB International Rectifier IRFBC42PBF vs IRFBC42

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