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| Manufacturer | Description | Price Range | Set Alert | Details |
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| New Jersey Semiconductor Products Inc | HEXFET TRANSISTOR, TO-39 | $16.0000 / $20.8000 |
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| Harris Semiconductor | Power Field-Effect Transistor, 2.5A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | $0.9010 / $1.4500 |
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| Intersil Corporation | Power Field-Effect Transistor, 2.5A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
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| Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 2.5A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
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| International Rectifier | Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
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| Rochester Electronics LLC | 2.5A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF |
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| TT Electronics Power and Hybrid / Semelab Limited | 2A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, TO-39, 3 PIN |
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| General Electric Solid State | Transistor |
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| Thomson Consumer Electronics | Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Infineon Technologies AG | Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
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| TT Electronics Resistors | Power Field-Effect Transistor, 2A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF |
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| Vishay Siliconix | Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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