Part Details for JAN2N6802 by Unitrode Corporation
Overview of JAN2N6802 by Unitrode Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for JAN2N6802
JAN2N6802 CAD Models
JAN2N6802 Part Data Attributes
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JAN2N6802
Unitrode Corporation
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Datasheet
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JAN2N6802
Unitrode Corporation
Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,
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Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | UNITRODE CORP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 2.5 A | |
Drain-source On Resistance-Max | 1.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 60 pF | |
JEDEC-95 Code | TO-205AF | |
JESD-30 Code | O-MBCY-W3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 25 W | |
Pulsed Drain Current-Max (IDM) | 11 A | |
Qualification Status | Not Qualified | |
Reference Standard | MILITARY STANDARD (USA) | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 85 ns | |
Turn-on Time-Max (ton) | 60 ns |
Alternate Parts for JAN2N6802
This table gives cross-reference parts and alternative options found for JAN2N6802. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN2N6802, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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JANTX2N6802 | Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | Harris Semiconductor | JAN2N6802 vs JANTX2N6802 |
IRFF430 | Power Field-Effect Transistor, 2.75A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Fairchild Semiconductor Corporation | JAN2N6802 vs IRFF430 |
2N6802 | Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Unitrode Corporation | JAN2N6802 vs 2N6802 |
2N6802 | 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JAN2N6802 vs 2N6802 |
JANTX2N6802 | Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Unitrode Corp (RETIRED) | JAN2N6802 vs JANTX2N6802 |
IRFF430-JQR-B | 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Power and Hybrid / Semelab Limited | JAN2N6802 vs IRFF430-JQR-B |
JANTXV2N6802 | Small Signal Field-Effect Transistor, 2.5A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | Microsemi Corporation | JAN2N6802 vs JANTXV2N6802 |
2N6802-QR-B | Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Resistors | JAN2N6802 vs 2N6802-QR-B |
JANTX2N6802 | Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, | Unitrode Corporation | JAN2N6802 vs JANTX2N6802 |
2N6802-JQR-B | Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN | TT Electronics Resistors | JAN2N6802 vs 2N6802-JQR-B |