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Transistors Power Field-Effect Transistors IRFF430

IRFF430
Description: Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

Overview of IRFF430 by TT Electronics Resistors

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Part Data Attributes for IRFF430 by TT Electronics Resistors
Parametric Data

IRFF430
TT Electronics Resistors
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
TT ELECTRONICS PLC
Package Description
HERMETIC SEALED, TO-39, 3 PIN
Reach Compliance Code
compliant
ECCN Code
EAR99
Avalanche Energy Rating (Eas)
0.35 mJ
Configuration
SINGLE
DS Breakdown Voltage-Min
500 V
Drain Current-Max (ID)
2.5 A
Drain-source On Resistance-Max
1.725 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-205AF
JESD-30 Code
O-MBCY-W3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
METAL
Package Shape
ROUND
Package Style
CYLINDRICAL
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
11 A
Qualification Status
Not Qualified
Surface Mount
NO
Terminal Form
WIRE
Terminal Position
BOTTOM
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Transistor Element Material
SILICON
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  1. IRFF430
    TT Electronics Resistors
    Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN
    VS

Alternate Parts for IRFF430

This table gives cross-reference parts and alternative options found for IRFF430. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFF430, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
JANTX2N6802 Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRFF430 vs JANTX2N6802
IRFF430 Power Field-Effect Transistor, 2.75A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Fairchild Semiconductor Corporation IRFF430 vs IRFF430
2N6802 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corporation IRFF430 vs 2N6802
2N6802 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF430 vs 2N6802
JANTX2N6802 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corp (RETIRED) IRFF430 vs JANTX2N6802
IRFF430-JQR-B 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF430 vs IRFF430-JQR-B
JANTXV2N6802 Small Signal Field-Effect Transistor, 2.5A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN Microsemi Corporation IRFF430 vs JANTXV2N6802
2N6802-QR-B Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Resistors IRFF430 vs 2N6802-QR-B
JANTX2N6802 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corporation IRFF430 vs JANTX2N6802
2N6802-JQR-B Power Field-Effect Transistor, 2.5A I(D), 500V, 1.725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Resistors IRFF430 vs 2N6802-JQR-B
Part Number Description Manufacturer Compare
JANTX2N6802 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN Infineon Technologies AG IRFF430 vs JANTX2N6802
JANTXV2N6802 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-205AF, 3 PIN Infineon Technologies AG IRFF430 vs JANTXV2N6802
JANTX2N6802 Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Defense Logistics Agency IRFF430 vs JANTX2N6802
2N6802 Power Field-Effect Transistor, 2.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, Unitrode Corp (RETIRED) IRFF430 vs 2N6802
IRFF430-JQR-B 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF430 vs IRFF430-JQR-B
2N6802-QR-B 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF430 vs 2N6802-QR-B
2N6802-JQR-B 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF430 vs 2N6802-JQR-B
2N6802 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF430 vs 2N6802
2N6802 Power Field-Effect Transistor, 3.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF Harris Semiconductor IRFF430 vs 2N6802
IRFF430-JQR-BR1 2.5A, 500V, 1.725ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN TT Electronics Power and Hybrid / Semelab Limited IRFF430 vs IRFF430-JQR-BR1

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