Datasheets
IRFL014N by:

Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Part Details for IRFL014N by Infineon Technologies AG

Overview of IRFL014N by Infineon Technologies AG

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Part Details for IRFL014N

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IRFL014N Part Data Attributes:

IRFL014N Infineon Technologies AG
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IRFL014N Infineon Technologies AG Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Infineon
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 1.9 A
Drain-source On Resistance-Max 0.16 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-261AA
JESD-30 Code R-PSSO-G3
JESD-609 Code e0
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFL014N

This table gives cross-reference parts and alternative options found for IRFL014N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFL014N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFL014NPBF Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 International Rectifier IRFL014N vs IRFL014NPBF
IRFL014N Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, International Rectifier IRFL014N vs IRFL014N
IRFL014NTRPBF Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 Infineon Technologies AG IRFL014N vs IRFL014NTRPBF
IRFL014NTRPBF Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 International Rectifier IRFL014N vs IRFL014NTRPBF
Part Number Description Manufacturer Compare
IRFL014NTRPBF Small Signal Field-Effect Transistor, 1.9A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA, LEAD FREE PACKAGE-4 Infineon Technologies AG IRFL014N vs IRFL014NTRPBF
RSR020N06HZGTL Small Signal Field-Effect Transistor, ROHM Semiconductor IRFL014N vs RSR020N06HZGTL
SI2308BDS-T1-BE3 Small Signal Field-Effect Transistor, Vishay Intertechnologies IRFL014N vs SI2308BDS-T1-BE3
SI2308BDS-T1-E3 Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236, Vishay Intertechnologies IRFL014N vs SI2308BDS-T1-E3
SI2308DS-T1-E3 Small Signal Field-Effect Transistor, 2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, LEAD FREE, TO-236, 3 PIN Vishay Siliconix IRFL014N vs SI2308DS-T1-E3
SI2308BDS-T1-E3 TRANSISTOR 1900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT, SSOT-23, 3 PIN, FET General Purpose Small Signal Vishay Siliconix IRFL014N vs SI2308BDS-T1-E3
SI2308BDS-T1-GE3 Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, Vishay Intertechnologies IRFL014N vs SI2308BDS-T1-GE3

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