Part Details for IRFM450 by International Rectifier
Overview of IRFM450 by International Rectifier
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFM450
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 5 |
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RFQ | ||
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Bristol Electronics | 1 |
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RFQ | ||
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Quest Components | 2 |
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$123.5000 / $130.0000 | Buy Now | |
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Quest Components | 1 |
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$104.0000 | Buy Now | |
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Quest Components | 1 |
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$183.4962 | Buy Now |
Part Details for IRFM450
IRFM450 CAD Models
IRFM450 Part Data Attributes
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IRFM450
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFM450
International Rectifier
Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
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Pbfree Code | No | |
Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 750 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.515 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-254AA | |
JESD-30 Code | S-MSFM-P3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | METAL | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 150 W | |
Power Dissipation-Max (Abs) | 150 W | |
Pulsed Drain Current-Max (IDM) | 48 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 300 ns | |
Turn-on Time-Max (ton) | 225 ns |
Alternate Parts for IRFM450
This table gives cross-reference parts and alternative options found for IRFM450. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFM450, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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2N7228 | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | TT Electronics Resistors | IRFM450 vs 2N7228 |
IRFM450 | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | Infineon Technologies AG | IRFM450 vs IRFM450 |
IRFM450-JQR-B | 12A, 500V, 0.515ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | TT Electronics Power and Hybrid / Semelab Limited | IRFM450 vs IRFM450-JQR-B |
IRFM450-JQR-B | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | TT Electronics Resistors | IRFM450 vs IRFM450-JQR-B |
IRFM450PBF | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | International Rectifier | IRFM450 vs IRFM450PBF |
IRFM450 | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | TT Electronics Resistors | IRFM450 vs IRFM450 |
JANTXV2N7228 | 12A, 500V, 0.415ohm, N-CHANNEL, Si, POWER, MOSFET, TO-254AA | Intersil Corporation | IRFM450 vs JANTXV2N7228 |
IRFM450-QR-BR1 | Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, | TT Electronics Resistors | IRFM450 vs IRFM450-QR-BR1 |
JANTXV2N7228 | Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Microsemi Corporation | IRFM450 vs JANTXV2N7228 |
2N7228 | Power Field-Effect Transistor, 12A I(D), 500V, 0.415ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN | Sensitron Semiconductors | IRFM450 vs 2N7228 |