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| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| International Rectifier | Power Field-Effect Transistor, 27A I(D), 100V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | $1.8750 / $3.7500 |
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| Harris Semiconductor | Power Field-Effect Transistor, 27A I(D), 100V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 |
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| Thomson Consumer Electronics | Power Field-Effect Transistor, 26A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Intersil Corporation | Power Field-Effect Transistor, 26A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Samsung Semiconductor | Power Field-Effect Transistor, 25A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| FCI Semiconductor | Power Field-Effect Transistor, 26A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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