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Part Details for IRFP150N by Infineon Technologies AG
Overview of IRFP150N by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFP150N
| Part # | Distributor | Description | Stock | Price | Buy | |
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Win Source Electronics | Power MOSFET(Vdss=100V, Rds(on)=0.035W, Id=42A) | MOSFET N-CH 100V 42A TO-247AC | 98500 |
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$0.4380 / $0.6560 | Buy Now |
Part Details for IRFP150N
IRFP150N CAD Models
IRFP150N Part Data Attributes
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IRFP150N
Infineon Technologies AG
Buy Now
Datasheet
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IRFP150N
Infineon Technologies AG
Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN
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| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | TO-247AC, 3PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Infineon | |
| Additional Feature | AVALANCHE RATED, FAST SWITCHING | |
| Avalanche Energy Rating (Eas) | 420 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 42 A | |
| Drain-source On Resistance-Max | 0.036 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247AC | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 225 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 140 W | |
| Pulsed Drain Current-Max (IDM) | 140 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFP150N
This table gives cross-reference parts and alternative options found for IRFP150N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP150N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFP150NPBF | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | Infineon Technologies AG | IRFP150N vs IRFP150NPBF |
| IRFP150N | Power Field-Effect Transistor, 44A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Fairchild Semiconductor Corporation | IRFP150N vs IRFP150N |
| MTH40N08 | Power Field-Effect Transistor, 40A I(D), 80V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AC | Motorola Semiconductor Products | IRFP150N vs MTH40N08 |
| MTH40N10 | 40A, 100V, 0.04ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC | Motorola Mobility LLC | IRFP150N vs MTH40N10 |
| STW50N10 | 50A, 100V, 0.035ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN | STMicroelectronics | IRFP150N vs STW50N10 |
| RFG40N10 | Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, | Fairchild Semiconductor Corporation | IRFP150N vs RFG40N10 |
| BUZ344 | Power Field-Effect Transistor, 50A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | Infineon Technologies AG | IRFP150N vs BUZ344 |
| IRFP150NPBF | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | International Rectifier | IRFP150N vs IRFP150NPBF |
| STW60N10 | 60A, 100V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STMicroelectronics | IRFP150N vs STW60N10 |
| IRFP150N | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, TO-247AC, 3PIN | International Rectifier | IRFP150N vs IRFP150N |