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| Manufacturer | Description | Price Range | Set Alert | Details |
|---|---|---|---|---|
| International Rectifier | Power Field-Effect Transistor, 18A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | $29.2740 / $34.4400 |
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| Hongxing Electrical Ltd | N-CHANNEL POWER MOSFET |
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| Thomson Consumer Electronics | Power Field-Effect Transistor, 17A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Harris Semiconductor | Power Field-Effect Transistor, 18A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 |
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| FCI Semiconductor | Power Field-Effect Transistor, 17A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Intersil Corporation | Power Field-Effect Transistor, 17A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Samsung Semiconductor | Power Field-Effect Transistor, 16A I(D), 150V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Rochester Electronics LLC | 18A, 150V, 0.22ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN |
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