| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| IRFP250PBF | Vishay Intertechnologies | $2.8050 | Power Field-Effect Transistor, 30A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | IRFP250 vs IRFP250PBF |
| IRFP250 | Harris Semiconductor | Check for Price | Power Field-Effect Transistor, 33A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | IRFP250 vs IRFP250 |
Part Details for IRFP250 by STMicroelectronics
Results Overview of IRFP250 by STMicroelectronics
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (2 replacements)
- Tariff Estimator: (Not Available)
- Number of Functional Equivalents: (2 options)
- CAD Models: (Available)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IRFP250 Information
IRFP250 by STMicroelectronics is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IRFP250
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
497-2639-5-ND
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DigiKey | MOSFET N-CH 200V 33A TO247-3 Min Qty: 600 Container: Tube |
0 Tube |
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$1.3082 | Buy Now |
IRFP250 CAD Models
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IRFP250 Part Data Attributes
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IRFP250
STMicroelectronics
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Datasheet
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IRFP250
STMicroelectronics
Power Field-Effect Transistor, 33A I(D), 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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| Part Life Cycle Code | Obsolete | |
| Part Package Code | TO-247 | |
| Package Description | To-247, 3 Pin | |
| Pin Count | 3 | |
| ECCN Code | EAR99 | |
| Avalanche Energy Rating (Eas) | 600 Mj | |
| Configuration | Single With Built-In Diode | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 33 A | |
| Drain-source On Resistance-Max | 0.085 Ω | |
| FET Technology | Metal-Oxide Semiconductor | |
| Feedback Cap-Max (Crss) | 120 Pf | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | Enhancement Mode | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | Plastic/Epoxy | |
| Package Shape | Rectangular | |
| Package Style | Flange Mount | |
| Polarity/Channel Type | N-Channel | |
| Power Dissipation-Max (Abs) | 180 W | |
| Pulsed Drain Current-Max (IDM) | 132 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | No | |
| Terminal Finish | Tin/Lead (Sn/Pb) | |
| Terminal Form | Through-Hole | |
| Terminal Position | Single | |
| Transistor Application | Switching | |
| Transistor Element Material | Silicon |
Alternate Parts for IRFP250
This table gives cross-reference parts and alternative options found for IRFP250. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP250, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
IRFP250 Frequently Asked Questions (FAQ)
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The maximum SOA for the IRFP250 is typically defined by the voltage and current ratings. The device can handle up to 200V and 30A, but the SOA curve in the datasheet provides more detailed information on the safe operating region.
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To ensure the IRFP250 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive circuit should be able to provide a sufficient current to charge the gate capacitance quickly.
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The thermal resistance (Rth) of the IRFP250 is typically around 0.5°C/W for the junction-to-case thermal resistance (Rthjc) and 1.5°C/W for the junction-to-ambient thermal resistance (Rthja).
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Yes, the IRFP250 can be used in high-frequency switching applications, but the gate drive circuit should be optimized to minimize switching losses and ensure reliable operation. The device's switching characteristics, such as the rise and fall times, should be considered in the design.
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To protect the IRFP250 from overvoltage and overcurrent, consider using a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage, and a current sense resistor or a fuse to detect and respond to overcurrent conditions.