Part Details for IRFP452 by Harris Semiconductor
Overview of IRFP452 by Harris Semiconductor
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part Details for IRFP452
IRFP452 CAD Models
IRFP452 Part Data Attributes
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IRFP452
Harris Semiconductor
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Datasheet
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IRFP452
Harris Semiconductor
Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 180 W | |
Power Dissipation-Max (Abs) | 180 W | |
Pulsed Drain Current-Max (IDM) | 48 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 160 ns | |
Turn-on Time-Max (ton) | 93 ns |
Alternate Parts for IRFP452
This table gives cross-reference parts and alternative options found for IRFP452. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP452, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFP453 | 12A, 450V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STMicroelectronics | IRFP452 vs IRFP453 |
IRFP453 | Power Field-Effect Transistor, 12A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | TT Electronics Resistors | IRFP452 vs IRFP453 |
BUZ330 | 9.5A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC | Motorola Mobility LLC | IRFP452 vs BUZ330 |
BUZ330 | Power Bipolar Transistor | New Jersey Semiconductor Products Inc | IRFP452 vs BUZ330 |
2SK386 | TRANSISTOR 10 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | Toshiba America Electronic Components | IRFP452 vs 2SK386 |
BUZ339 | Power Field-Effect Transistor, 11.5A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | Siemens | IRFP452 vs BUZ339 |
IRFP453 | 12A, 450V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | IRFP452 vs IRFP453 |
IRFP453 | Power Field-Effect Transistor, 12A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | IRFP452 vs IRFP453 |
2SK694 | TRANSISTOR 12 A, 400 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | Toshiba America Electronic Components | IRFP452 vs 2SK694 |
IRFP452 | 12A, 500V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STMicroelectronics | IRFP452 vs IRFP452 |