There are no models available for this part yet.
Overview of IRFP452 by International Rectifier
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 5 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
CAD Models for IRFP452 by International Rectifier
Part Data Attributes for IRFP452 by International Rectifier
|
|
|
|---|---|
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Rohs Code
|
No
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|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
INTERNATIONAL RECTIFIER CORP
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|
Package Description
|
FLANGE MOUNT, R-PSFM-T3
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|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
Case Connection
|
DRAIN
|
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Configuration
|
SINGLE
|
|
DS Breakdown Voltage-Min
|
500 V
|
|
Drain Current-Max (ID)
|
12 A
|
|
Drain-source On Resistance-Max
|
0.5 Ω
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FET Technology
|
METAL-OXIDE SEMICONDUCTOR
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JEDEC-95 Code
|
TO-247AC
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JESD-30 Code
|
R-PSFM-T3
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JESD-609 Code
|
e0
|
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Number of Elements
|
1
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Number of Terminals
|
3
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Operating Mode
|
ENHANCEMENT MODE
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Operating Temperature-Max
|
150 °C
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Package Body Material
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PLASTIC/EPOXY
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Package Shape
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RECTANGULAR
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Package Style
|
FLANGE MOUNT
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|
Polarity/Channel Type
|
N-CHANNEL
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|
Power Dissipation-Max (Abs)
|
180 W
|
|
Pulsed Drain Current-Max (IDM)
|
48 A
|
|
Qualification Status
|
Not Qualified
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|
Surface Mount
|
NO
|
|
Terminal Finish
|
TIN LEAD
|
|
Terminal Form
|
THROUGH-HOLE
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Terminal Position
|
SINGLE
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Transistor Element Material
|
SILICON
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Alternate Parts for IRFP452
This table gives cross-reference parts and alternative options found for IRFP452. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP452, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| BUZ330 | Power Field-Effect Transistor, 9.5A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | Siemens | IRFP452 vs BUZ330 |
| IRFP344 | Power Field-Effect Transistor, 9.5A I(D), 450V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | IRFP452 vs IRFP344 |
| IRFP448 | Power Field-Effect Transistor, 11A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | IRFP452 vs IRFP448 |
| IRFP344PBF | Power Field-Effect Transistor, 9.5A I(D), 450V, 0.63ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, LEAD FREE PACKAGE-3 | International Rectifier | IRFP452 vs IRFP344PBF |
| BUZ339 | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | Infineon Technologies AG | IRFP452 vs BUZ339 |