Datasheets
IRFP453 by:

12A, 450V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET

Part Details for IRFP453 by TT Electronics Power and Hybrid / Semelab Limited

Overview of IRFP453 by TT Electronics Power and Hybrid / Semelab Limited

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Part Details for IRFP453

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IRFP453 Part Data Attributes

IRFP453 TT Electronics Power and Hybrid / Semelab Limited
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IRFP453 TT Electronics Power and Hybrid / Semelab Limited 12A, 450V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer SEMELAB LTD
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE
DS Breakdown Voltage-Min 450 V
Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for IRFP453

This table gives cross-reference parts and alternative options found for IRFP453. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP453, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
BUZ330 Power Field-Effect Transistor, 9.5A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA Infineon Technologies AG IRFP453 vs BUZ330
IRFP452 Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor IRFP453 vs IRFP452
2SK1016-01 Power Field-Effect Transistor, 15A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fuji Electric Co Ltd IRFP453 vs 2SK1016-01
IRFP453 12A, 450V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 STMicroelectronics IRFP453 vs IRFP453
IRFP452 12A, 500V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 STMicroelectronics IRFP453 vs IRFP452
BUZ330 Power Bipolar Transistor New Jersey Semiconductor Products Inc IRFP453 vs BUZ330
2SK386 TRANSISTOR 10 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Toshiba America Electronic Components IRFP453 vs 2SK386
IRFP452 Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors IRFP453 vs IRFP452
BUZ384 Power Field-Effect Transistor, 10.5A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA Siemens IRFP453 vs BUZ384
IRFP453 Power Field-Effect Transistor, 12A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier IRFP453 vs IRFP453
Part Number Description Manufacturer Compare
IRFP448 Power Field-Effect Transistor, 11A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN Vishay Siliconix IRFP453 vs IRFP448
2SK1016-01 Power Field-Effect Transistor, 15A I(D), 500V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Fuji Electric Co Ltd IRFP453 vs 2SK1016-01
2SK386 TRANSISTOR 10 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power Toshiba America Electronic Components IRFP453 vs 2SK386
IRFP453 Power Field-Effect Transistor, 12A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC International Rectifier IRFP453 vs IRFP453
IRFP453 Power Field-Effect Transistor, 12A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET TT Electronics Resistors IRFP453 vs IRFP453
STW14NB50 14A, 500V, 0.45ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN STMicroelectronics IRFP453 vs STW14NB50
IRFP453 Power Field-Effect Transistor, 12A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN Samsung Semiconductor IRFP453 vs IRFP453
BUZ330 Power Field-Effect Transistor, 9.5A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 Siemens IRFP453 vs BUZ330
BUZ384 Power Field-Effect Transistor, 10.5A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA Siemens IRFP453 vs BUZ384
IRFP453 12A, 450V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 Rochester Electronics LLC IRFP453 vs IRFP453

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