There are no models available for this part yet.
Overview of IRFP453 by Samsung Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 10 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Renewable Energy
CAD Models for IRFP453 by Samsung Semiconductor
Part Data Attributes for IRFP453 by Samsung Semiconductor
|
|
---|---|
Rohs Code
|
No
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
SAMSUNG SEMICONDUCTOR INC
|
Part Package Code
|
TO-3P
|
Package Description
|
FLANGE MOUNT, R-PSFM-T3
|
Pin Count
|
2
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Configuration
|
SINGLE
|
DS Breakdown Voltage-Min
|
450 V
|
Drain Current-Max (ID)
|
12 A
|
Drain-source On Resistance-Max
|
0.5 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JESD-30 Code
|
R-PSFM-T3
|
JESD-609 Code
|
e0
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
150 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
180 W
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
TIN LEAD
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Element Material
|
SILICON
|
Alternate Parts for IRFP453
This table gives cross-reference parts and alternative options found for IRFP453. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFP453, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFP452 | Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | Harris Semiconductor | IRFP453 vs IRFP452 |
IRFP453 | 12A, 450V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STMicroelectronics | IRFP453 vs IRFP453 |
IRFP453 | Power Field-Effect Transistor, 12A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | TT Electronics Resistors | IRFP453 vs IRFP453 |
BUZ330 | 9.5A, 500V, 0.6ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218AC | Motorola Mobility LLC | IRFP453 vs BUZ330 |
BUZ330 | Power Bipolar Transistor | New Jersey Semiconductor Products Inc | IRFP453 vs BUZ330 |
2SK386 | TRANSISTOR 10 A, 450 V, 0.7 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | Toshiba America Electronic Components | IRFP453 vs 2SK386 |
BUZ339 | Power Field-Effect Transistor, 11.5A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | Siemens | IRFP453 vs BUZ339 |
IRFP453 | 12A, 450V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET | TT Electronics Power and Hybrid / Semelab Limited | IRFP453 vs IRFP453 |
IRFP453 | Power Field-Effect Transistor, 12A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | International Rectifier | IRFP453 vs IRFP453 |
2SK694 | TRANSISTOR 12 A, 400 V, 0.5 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | Toshiba America Electronic Components | IRFP453 vs 2SK694 |