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| Manufacturer | Description | Price Range | Set Alert | Details |
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| Internet Systems Consortium Inc | $1.5162 / $2.5710 |
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| Littelfuse Inc | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| FCI Semiconductor | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Infineon Technologies AG | Power Field-Effect Transistor, 12A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC |
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| Harris Semiconductor | Power Field-Effect Transistor, 12A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 |
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| Intersil Corporation | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| International Rectifier | Power Field-Effect Transistor, 12A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC |
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| STMicroelectronics | Power Field-Effect Transistor, 12A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 |
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| General Electric Solid State | Transistor |
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| TT Electronics Resistors | Power Field-Effect Transistor, 12A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Samsung Semiconductor | Power Field-Effect Transistor, 12A I(D), 450V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| IXYS Corporation | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| TT Electronics Power and Hybrid / Semelab Limited | 12A, 450V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET |
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| Thomson Consumer Electronics | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Rochester Electronics LLC | 12A, 450V, 0.5ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
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