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| Manufacturer | Description | Price Range | Set Alert | Details |
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| Vishay Intertechnologies | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | $1.3625 |
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| International Rectifier | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | $0.3770 / $2.4500 |
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| Vishay Huntington | Power MOSFET(Vdss = 60 V, Rds(on) = 0.20 Ohm, Id= 7.7A) | MOSFET N-CH 60V 7.7A DPAK | $0.2305 / $0.2976 |
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| Vishay Siliconix | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
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| Thomson Consumer Electronics | Power Field-Effect Transistor, 7.7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET |
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| Fairchild Semiconductor Corporation | Power Field-Effect Transistor, 8.2A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Samsung Semiconductor | Power Field-Effect Transistor, 8.2A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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