-
Part Symbol
-
Footprint
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
38K2596
|
Newark | Mosfet, N-Ch, 60V, 7.7A, To-252, Transistor Polarity:N Channel, Drain Source Voltage Vds:60V, Continuous Drain Current Id:7.7A, On Resistance Rds(On):0.2Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, No. Of Pins:3Pins Rohs Compliant: Yes |Vishay IRFR014PBF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.9100 / $1.3000 | Buy Now |
DISTI #
IRFR014PBF
|
Avnet Americas | Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK - Bulk (Alt: IRFR014PBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Bulk | 0 |
|
RFQ | |
DISTI #
IRFR014PBF
|
Avnet Americas | Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK - Bulk (Alt: IRFR014PBF) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Container: Bulk | 0 |
|
$0.5072 / $0.6443 | Buy Now |
DISTI #
844-IRFR014PBF
|
Mouser Electronics | MOSFET 60V N-CH HEXFET MOSFET D-PAK RoHS: Compliant | 5735 |
|
$0.5390 / $1.0700 | Buy Now |
DISTI #
E02:0323_00021129
|
Arrow Electronics | Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK Min Qty: 1 Package Multiple: 1 Lead time: 12 Weeks Date Code: 2317 | Europe - 2117 |
|
$0.3334 / $0.4341 | Buy Now |
DISTI #
V99:2348_09218271
|
Arrow Electronics | Trans MOSFET N-CH 60V 7.7A 3-Pin(2+Tab) DPAK Min Qty: 1 Package Multiple: 1 Lead time: 18 Weeks Date Code: 2116 | Americas - 1013 |
|
$0.5042 / $0.5828 | Buy Now |
DISTI #
70078956
|
RS | MOSFET, Power, N-Ch, VDSS 60V, RDS(ON) 0.2Ohm, ID 7.7A, TO-252AA, PD 25W, VGS +/-20V | Vishay PCS IRFR014PBF RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
|
$0.6200 / $0.7300 | RFQ |
|
Future Electronics | Single N-Channel 60 V 0.2 Ohm 11 W Surface Mount Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Bulk | 0Bulk |
|
$0.5250 / $0.5450 | Buy Now |
|
Future Electronics | Single N-Channel 60 V 0.2 Ohm 11 W Surface Mount Power Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Bulk | 0Bulk |
|
$0.5250 / $0.5450 | Buy Now |
DISTI #
IRFR014PBF
|
TTI | MOSFET 60V N-CH HEXFET MOSFET D-PAK RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 75 Container: Tube | Americas - 0 |
|
$0.5320 / $0.5720 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IRFR014PBF
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
IRFR014PBF
Vishay Intertechnologies
Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Part Package Code | TO-252AA | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 12 Weeks | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 47 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 7.7 A | |
Drain-source On Resistance-Max | 0.2 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 25 W | |
Pulsed Drain Current-Max (IDM) | 31 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFR014PBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR014PBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFR014TRRPBF | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 | Vishay Intertechnologies | IRFR014PBF vs IRFR014TRRPBF |
SIHFR014TR-GE3 | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | IRFR014PBF vs SIHFR014TR-GE3 |
IRFR014TRL | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Vishay Siliconix | IRFR014PBF vs IRFR014TRL |
IRFR014TRL | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Vishay Intertechnologies | IRFR014PBF vs IRFR014TRL |
IRFR014TRLPBF | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 | Vishay Intertechnologies | IRFR014PBF vs IRFR014TRLPBF |
IRFR014-T1 | Power Field-Effect Transistor, 8.2A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | IRFR014PBF vs IRFR014-T1 |
IRFR014 | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | Vishay Intertechnologies | IRFR014PBF vs IRFR014 |