Part Details for IRFR540Z by International Rectifier
Overview of IRFR540Z by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (10 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFR540Z
Part # | Distributor | Description | Stock | Price | Buy | |
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Win Source Electronics | HEXFET® Power MOSFET | 111986 |
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$0.3770 / $0.5660 | Buy Now |
Part Details for IRFR540Z
IRFR540Z CAD Models
IRFR540Z Part Data Attributes
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IRFR540Z
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFR540Z
International Rectifier
Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Part Package Code | TO-252AA | |
Package Description | PLASTIC, DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 39 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 35 A | |
Drain-source On Resistance-Max | 0.0285 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 91 W | |
Pulsed Drain Current-Max (IDM) | 140 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IRFR540Z
This table gives cross-reference parts and alternative options found for IRFR540Z. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR540Z, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRFR540ZTRLPBF | Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR540Z vs IRFR540ZTRLPBF |
AUIRFR540Z | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | International Rectifier | IRFR540Z vs AUIRFR540Z |
IRFR540ZTR | Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR540Z vs IRFR540ZTR |
IRFR540ZPBF | Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR540Z vs IRFR540ZPBF |
IRFR540ZTRPBF | Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR540Z vs IRFR540ZTRPBF |
IRFR540ZTRL | Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR540Z vs IRFR540ZTRL |
AUIRFR540ZTRL | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Infineon Technologies AG | IRFR540Z vs AUIRFR540ZTRL |
IRFR540ZTRPBF | Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR540Z vs IRFR540ZTRPBF |
IRFR540ZPBF | Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR540Z vs IRFR540ZPBF |
AUIRFR540Z | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Infineon Technologies AG | IRFR540Z vs AUIRFR540Z |