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Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
13AC9142
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Newark | Mosfet, N-Ch, 100V, 35A, To-252Aa, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:35A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Infineon IRFR540ZTRPBF RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 5642 |
|
$0.7090 / $1.2500 | Buy Now |
DISTI #
448-IRFR540ZTRPBFCT-ND
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DigiKey | MOSFET N-CH 100V 35A DPAK Min Qty: 1 Lead time: 12 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
17334 In Stock |
|
$0.4497 / $1.2500 | Buy Now |
DISTI #
13AC9142
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Avnet Americas | Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 13AC9142) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 16 Weeks, 4 Days Container: Ammo Pack | 2000 Partner Stock |
|
$0.8290 / $1.2500 | Buy Now |
DISTI #
IRFR540ZTRPBF
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Avnet Americas | Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: IRFR540ZTRPBF) RoHS: Compliant Min Qty: 6000 Package Multiple: 2000 Lead time: 12 Weeks, 0 Days Container: Reel | 0 |
|
$0.3374 | Buy Now |
DISTI #
942-IRFR540ZTRPBF
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Mouser Electronics | MOSFETs MOSFT 100V 35A 28.5mOhm 39nC Qg RoHS: Compliant | 21805 |
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$0.4490 / $0.8400 | Buy Now |
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Future Electronics | 100V 35A 28.5 mΩ N-ch DPAK (TO-252) RoHS: Compliant pbFree: Yes Min Qty: 2000 Package Multiple: 2000 Lead time: 12 Weeks Container: Reel | 4000Reel |
|
$0.4200 / $0.4500 | Buy Now |
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Future Electronics | 100V 35A 28.5 mΩ N-ch DPAK (TO-252) RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 2000 Lead time: 12 Weeks Container: Reel | 0Reel |
|
$0.4200 / $0.4500 | Buy Now |
DISTI #
81008988
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Verical | Trans MOSFET N-CH Si 100V 35A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 2000 Package Multiple: 2000 Date Code: 2420 | Americas - 78000 |
|
$0.4316 | Buy Now |
DISTI #
69263778
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Verical | Trans MOSFET N-CH Si 100V 35A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R Min Qty: 40 Package Multiple: 1 Date Code: 2236 | Americas - 31429 |
|
$0.4550 / $0.7700 | Buy Now |
|
Chip 1 Exchange | INSTOCK | 11475 |
|
RFQ |
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IRFR540ZTRPBF
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
IRFR540ZTRPBF
Infineon Technologies AG
Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-3
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Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 16 Weeks, 4 Days | |
Samacsys Manufacturer | Infineon | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | |
Avalanche Energy Rating (Eas) | 39 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 35 A | |
Drain-source On Resistance-Max | 0.0285 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 91 W | |
Pulsed Drain Current-Max (IDM) | 140 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - with Nickel (Ni) barrier | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IRFR540ZTRPBF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR540ZTRPBF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IRFR540ZTRLPBF | Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR540ZTRPBF vs IRFR540ZTRLPBF |
AUIRFR540Z | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | International Rectifier | IRFR540ZTRPBF vs AUIRFR540Z |
IRFR540ZTR | Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR540ZTRPBF vs IRFR540ZTR |
IRFR540ZPBF | Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR540ZTRPBF vs IRFR540ZPBF |
IRFR540ZTRL | Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-3 | International Rectifier | IRFR540ZTRPBF vs IRFR540ZTRL |
AUIRFR540ZTRL | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Infineon Technologies AG | IRFR540ZTRPBF vs AUIRFR540ZTRL |
IRFR540ZTRPBF | Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR540ZTRPBF vs IRFR540ZTRPBF |
IRFR540ZPBF | Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | IRFR540ZTRPBF vs IRFR540ZPBF |
AUIRFR540Z | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | Infineon Technologies AG | IRFR540ZTRPBF vs AUIRFR540Z |
IRFR540ZTRLPBF | Power Field-Effect Transistor, 35A I(D), 100V, 0.0285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, HALOGEN AND LEAD FREE, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR540ZTRPBF vs IRFR540ZTRLPBF |