Part Details for IRFR5410 by International Rectifier
Overview of IRFR5410 by International Rectifier
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IRFR5410
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 101 |
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Bristol Electronics | 70 |
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Quest Components | MOSFET Transistor, P-Channel, TO-252AA | 3 |
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$0.7500 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-252AA | 24 |
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$0.7560 / $0.9450 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-252AA | 160 |
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$0.6250 / $1.2500 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-252AA | 440 |
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$0.6250 / $1.5625 | Buy Now |
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Quest Components | MOSFET Transistor, P-Channel, TO-252AA | 362 |
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$2.3099 / $3.7458 | Buy Now |
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ComSIT USA | HEXFET POWER MOSFET Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA RoHS: Not Compliant | Europe - 375 |
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Velocity Electronics | Our Stock | 67 |
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RFQ |
Part Details for IRFR5410
IRFR5410 CAD Models
IRFR5410 Part Data Attributes:
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IRFR5410
International Rectifier
Buy Now
Datasheet
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Compare Parts:
IRFR5410
International Rectifier
Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-2/3
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| Pbfree Code | No | |
| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
| Part Package Code | TO-252AA | |
| Package Description | PLASTIC, DPAK-2/3 | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | HIGH RELIABILITY, AVALANCHE RATED, ULTRA-LOW RESISTANCE | |
| Avalanche Energy Rating (Eas) | 194 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 13 A | |
| Drain-source On Resistance-Max | 0.205 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e0 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 240 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 66 W | |
| Pulsed Drain Current-Max (IDM) | 52 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IRFR5410
This table gives cross-reference parts and alternative options found for IRFR5410. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR5410, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFR5410TRPBF | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3 | International Rectifier | IRFR5410 vs IRFR5410TRPBF |
| AUIRFR5410 | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR5410 vs AUIRFR5410 |
| SP001578112 | Power Field-Effect Transistor, | Infineon Technologies AG | IRFR5410 vs SP001578112 |
| AUIRFR5410TRL | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | Infineon Technologies AG | IRFR5410 vs AUIRFR5410TRL |
| IRFR5410HR | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 | International Rectifier | IRFR5410 vs IRFR5410HR |
| IRFR5410TRPBF | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3 | Infineon Technologies AG | IRFR5410 vs IRFR5410TRPBF |
| AUIRFR5410TRL | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRFR5410 vs AUIRFR5410TRL |
| AUIRFR5410TRR | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3 | International Rectifier | IRFR5410 vs AUIRFR5410TRR |
| IRFR5410TRLPBF | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-2/3 | International Rectifier | IRFR5410 vs IRFR5410TRLPBF |
| IRFR5410TRR | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, PLASTIC, DPAK-2/3 | International Rectifier | IRFR5410 vs IRFR5410TRR |