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Transistors Power Field-Effect Transistors IRFR9110

IRFR9110
Description: Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,

Overview of IRFR9110 by Fairchild Semiconductor Corporation

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Where used in Applications: Consumer Electronics Medical Imaging

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Part Data Attributes for IRFR9110 by Fairchild Semiconductor Corporation
Parametric Data

IRFR9110
Fairchild Semiconductor Corporation
Buy Now
-
-
Rohs Code
No
Part Life Cycle Code
Obsolete
Ihs Manufacturer
FAIRCHILD SEMICONDUCTOR CORP
Reach Compliance Code
compliant
ECCN Code
EAR99
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
100 V
Drain Current-Max (ID)
3.1 A
Drain-source On Resistance-Max
1.2 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252AA
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e0
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (Abs)
25 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
TIN LEAD
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. IRFR9110
    Fairchild Semiconductor Corporation
    Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
    VS

Alternate Parts for IRFR9110

This table gives cross-reference parts and alternative options found for IRFR9110. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR9110, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IRFR9110PBF Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFR9110 vs IRFR9110PBF
IRFR9110TRRPBF Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFR9110 vs IRFR9110TRRPBF
IRFR9110PBF Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR9110 vs IRFR9110PBF
IRFR9110 Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies IRFR9110 vs IRFR9110
IRFR9110TRL Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix IRFR9110 vs IRFR9110TRL
IRFR9110 Power Field-Effect Transistor, 3.2A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR9110 vs IRFR9110
IRFR91109A 3.1A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation IRFR9110 vs IRFR91109A
IRFR9110TRPBF Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFR9110 vs IRFR9110TRPBF
SIHFR9110TRL-GE3 TRANSISTOR 3.1 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9110 vs SIHFR9110TRL-GE3
IRFR9110TRLPBF Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFR9110 vs IRFR9110TRLPBF
Part Number Description Manufacturer Compare
IRFR9110 3.1A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation IRFR9110 vs IRFR9110
IRFR9110TRRPBF Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 International Rectifier IRFR9110 vs IRFR9110TRRPBF
IRFR9110TR Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR9110 vs IRFR9110TR
IRFR91109A 3.1A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC IRFR9110 vs IRFR91109A
IRFR9110TRPBF Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFR9110 vs IRFR9110TRPBF
IRFR91109A Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation IRFR9110 vs IRFR91109A
SIHFR9110TRL-GE3 TRANSISTOR 3.1 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9110 vs SIHFR9110TRL-GE3
IRFR91109A 3.1A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation IRFR9110 vs IRFR91109A
IRFR9110TRLPBF TRANSISTOR 3.1 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR9110 vs IRFR9110TRLPBF
IRFR9110TRL Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Vishay Siliconix IRFR9110 vs IRFR9110TRL

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