Datasheets
IRFR91109A by:

3.1A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA

Part Details for IRFR91109A by Intersil Corporation

Overview of IRFR91109A by Intersil Corporation

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Applications Consumer Electronics Medical Imaging

Part Details for IRFR91109A

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IRFR91109A Part Data Attributes:

IRFR91109A Intersil Corporation
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IRFR91109A Intersil Corporation 3.1A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Reach Compliance Code unknown
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 3.1 A
Drain-source On Resistance-Max 1.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IRFR91109A

This table gives cross-reference parts and alternative options found for IRFR91109A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IRFR91109A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRFR9110 Power Field-Effect Transistor, 3.2A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR91109A vs IRFR9110
IRFR9110TRPBF Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFR91109A vs IRFR9110TRPBF
IRFR9110TRLPBF Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Vishay Intertechnologies IRFR91109A vs IRFR9110TRLPBF
IRFR9110PBF Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR91109A vs IRFR9110PBF
IRFR9110TRPBF Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, DPAK-3 Vishay Intertechnologies IRFR91109A vs IRFR9110TRPBF
SIHFR9110TR-GE3 TRANSISTOR 3.1 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR91109A vs SIHFR9110TR-GE3
IRFR9110 3.1A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA Intersil Corporation IRFR91109A vs IRFR9110
IRFR9110TRR Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA International Rectifier IRFR91109A vs IRFR9110TRR
IRFR9110TRRPBF Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Vishay Intertechnologies IRFR91109A vs IRFR9110TRRPBF
IRFR9110PBF Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFR91109A vs IRFR9110PBF
Part Number Description Manufacturer Compare
IRFR9110TRPBF Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, ROHS COMPLIANT, DPAK-3 Vishay Siliconix IRFR91109A vs IRFR9110TRPBF
SIHFR9110TR-GE3 TRANSISTOR 3.1 A, 100 V, 1.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, HALOGEN FREE AND ROHS COMPLIANT, DPAK-3, FET General Purpose Power Vishay Siliconix IRFR91109A vs SIHFR9110TR-GE3
IRFR91109A Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor IRFR91109A vs IRFR91109A
IRFR9110 Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation IRFR91109A vs IRFR9110
IRFR91109A Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, Fairchild Semiconductor Corporation IRFR91109A vs IRFR91109A
IRFR91109A 3.1A, 100V, 1.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA Rochester Electronics LLC IRFR91109A vs IRFR91109A
IRFR9110TRRPBF Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, DPAK-3 Vishay Intertechnologies IRFR91109A vs IRFR9110TRRPBF
IRFR9110 Power Field-Effect Transistor, 3.2A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor IRFR91109A vs IRFR9110
IRFR9110 Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Vishay Intertechnologies IRFR91109A vs IRFR9110
IRFR9110 Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 International Rectifier IRFR91109A vs IRFR9110

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